2SC2290A_07 TOSHIBA [Toshiba Semiconductor], 2SC2290A_07 Datasheet

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2SC2290A_07

Manufacturer Part Number
2SC2290A_07
Description
SILICON NPN EPITAXIAL PLANAR TYPE
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC2290A_07.pdf (4 pages)
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
ABSOLUTE MAXIMUM RATINGS
MARKING
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note: Using continuously under heavy loads (e.g. the application of high
Specified 12.5V, 28MHz Characteristics
Output Power
Power Gain
Collector Efficiency
Intermodulation Distortion : IMD = −30dB (Max.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
CHARACTERISTIC
2SC2290
TOSHIBA
JAPAN
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
: Po = 60W
: Gp = 11.8dB (Min.)
: η
Dot
Lot No.
C
= 35% (Min.)
SYMBOL
V
V
V
V
2SC2290A
T
P
CBO
CEO
EBO
CES
PEP
I
T
stg
C
C
j
(Tc = 25°C)
(Min.)
−65~175
RATING
175
175
45
45
18
20
4
1
UNIT
°C
°C
W
V
V
V
V
A
Weight: 5.2g
JEDEC
EIAJ
TOSHIBA
2−13B1A
2SC2290A
2007-11-01
—
—
Unit in mm

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2SC2290A_07 Summary of contents

Page 1

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : η Intermodulation Distortion ...

Page 2

ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Output Capacitance Power Gain Input Power Collector Efficiency Intermodulation Distortion Series Equivalent Input Impedance Series Equivalent Output Impedance * Pulse Test: Pulse Width ≤ ...

Page 3

Fig. Pi TEST CIRCUIT CAUTION These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2SC2290A 2007-11-01 ...

Page 4

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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