2SC2290A_07 TOSHIBA [Toshiba Semiconductor], 2SC2290A_07 Datasheet
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2SC2290A_07
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2SC2290A_07 Summary of contents
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : η Intermodulation Distortion ...
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ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Output Capacitance Power Gain Input Power Collector Efficiency Intermodulation Distortion Series Equivalent Input Impedance Series Equivalent Output Impedance * Pulse Test: Pulse Width ≤ ...
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Fig. Pi TEST CIRCUIT CAUTION These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2SC2290A 2007-11-01 ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...