2SC3076_05 TOSHIBA [Toshiba Semiconductor], 2SC3076_05 Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: V • Excellent switching time 1.0 µs (typ.) stg • Complementary to 2SA1241 Maximum Ratings (Ta = 25°C) Characteristics ...

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Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Note: h classification ...

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V – 1.2 Common emitter Tc = 25°C 1 0.8 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector current I ( – ...

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I – 2.0 Common emitter 1.5 1.0 0 100°C 25 − 0.4 0.8 1.2 1.6 Base-emitter voltage V (V) BE Safe Operating Area max (pulsed)* ...

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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any ...