2SC2235_06 TOSHIBA [Toshiba Semiconductor], 2SC2235_06 Datasheet - Page 3

• Manufacturer Part Number: 2SC2235_06
• Description: Silicon NPN Epitaxial Type (PCT Process)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

3000
1000
1000
0.05
0.03
0.01
500
300
100
800
600
400
200
0.5
0.3
0.1
50
30
10
0
5
3
1
0.5
0
3
I C max (pulsed)*
I C max (continuous)
*: Single nonrepetitive
Curves must be derated
linearly with increase in
temperature.
Common emitter
I C /I B = 10
1
pulse Ta = 25°C
DC
operation
2
Collector-emitter voltage V
Collector-emitter voltage V
10
15
3
Collector current I
Ta = 100°C
4
Safe Operating Area
5
10
V
−25
25
10
30
CE (sat)
I
C
6
– V
100 ms*
30
CE
7
8
– I
I B = 1 mA
100
50
C
C
5
4
3
2
0
1 ms*
100
(mA)
Common emitter
Ta = 25°C
10
CE
CE
10 ms*
300
(V)
(V)
300 500
12
1000
1000
14
3
1000
1000
500
300
100
800
600
400
200
800
600
400
200
50
30
10
0
0
3
0
0
Common emitter
V CE = 5 V
20
0.2
10
Base-emitter voltage V
Ambient temperature Ta (°C)
Collector current I
40
Ta = 100°C
0.4
Ta = 100°C
60
30
−25
25
I
h
P
C
FE
C
– V
0.6
80
– Ta
– I
BE
C
25
100
100
C
0.8
Common emitter
V CE = 5 V
BE
(mA)
120
−25
(V)
300
1.0
140
2006-11-09
2SC2235
1000
160
1.2