BFP280TRW VISHAY [Vishay Siliconix], BFP280TRW Datasheet - Page 3

• Manufacturer Part Number: BFP280TRW
• Description: Silicon NPN Planar RF Transistor
• Manufacturer: VISHAY [Vishay Siliconix]

Electrical DC Characteristics
T
Electrical AC Characteristics
T
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
Collector-emitter saturation voltage
DC forward current transfer ratio
Transition frequency
Collector-base capacitance
Collector-emitter capacitance V
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Document Number 85016
Rev. 2, 20–Jan-99
amb
amb
= 25 _ C, unless otherwise specified
= 25 _ C, unless otherwise specified
Parameter
Parameter
q
y
V
V
V
V
V
f = 900 MHz
V
f = 1.75 GHz
f = 900 MHz, Z
I
f = 900 MHz, Z
I
V
Z
C
C
0
CE
CE
CB
CE
EB
CE
CE
CE
= 3 mA, V
= 6 mA, V
= 50
= 0.5 V, f = 1 MHz
= 1 V, I
= 5 V, I
= 10 V, f = 1 MHz
= 8 V, f = 1 MHz
= 1 V, I
= 1 V, I
= 5 V, I
V
V
V
I
V
V
C
C
CE
CB
EB
CE
CE
W
= 1 mA, I
= 5 mA, I
BFP280T/BFP280TW/BFP280TRW
= 15 V, V
= 10 V, I
= 1 V, I
= 1 V, I
= 1 V, I
Test Conditions
C
C
C
C
C
CE
CE
= 3 mA, f = 500 MHz
= 6 mA, f = 500 MHz
= 3 mA, Z
= 3 mA, Z
= 6 mA, f = 1 GHz,
S
S
= 1 V
= 5 V
Test Conditions
= 50
= 50
C
B
B
C
C
E
= 0
= 0
= 0.5 mA
= 0.25 mA
= 3 mA
BE
= 0
W
W
= 0
S
S
, Z
, Z
= Z
= Z
L
L
= Z
= Z
Sopt
Sopt
Lopt
Lopt
,
,
,
,
www.vishay.de FaxBack [phone]
Symbol
S
G
G
C
C
C
21e
V
f
f
F
F
Symbol
T
T
eb
cb
ce
pe
pe
V
(BR)CEO
I
I
I
h
h
CBO
EBO
CEsat
CES
FE
FE
2
Vishay Telefunken
Min
Min Typ Max Unit
50
50
8
0.15
Typ
0.3
0.3
1.6
2.4
16
19
15
5
7
100
0.1
90
Max
100
100
150
0.4
1
3 (6)
GHz
GHz
Unit
pF
pF
pF
dB
dB
dB
dB
dB
m
nA
m
V
V
A
A