2SC4226_11 SECOS [SeCoS Halbleitertechnologie GmbH], 2SC4226_11 Datasheet
2SC4226_11
Manufacturer Part Number
2SC4226_11
Description
NPN Silicon Epitaxial Planar Transistor
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.2SC4226_11.pdf
(3 pages)
24-Feb-2011 Rev. B
FEATURE
APPLICATIONS
CLASSIFICATION OF h
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
●
●
●
●
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Feed Back Capacitance
Noise Figure
Product-Rank
Package
SOT-323
Marking
Range
Low noise
High gain
Power dissipation.(P
High frequency low noise amplifier.
Elektronische Bauelemente
Parameter
Parameter
2SC4226-P
40~80
r23
MPQ
FE
3K
C
=150mW)
2SC4226-Q
Symbol
70~140
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
r24
I
I
h
C
NF
CBO
EBO
f
FE
T
re
A suffix of “-C” specifies halogen & lead-free
( T
LeaderSize
( T
A
= 25°C unless otherwise specified)
7’ inch
A
= 25°C unless otherwise specified)
Symbol
RoHS Compliant Product
T
Min.
2SC4226-R
3.0
J
V
V
V
20
12
40
, T
3
-
-
-
-
P
125~250
CBO
CEO
EBO
I
C
C
STG
r25
Typ.
110
4.5
0.7
1.2
-
-
-
-
-
+150, -65 ~ +150
NPN Silicon Epitaxial Planar Transistor
Ratings
Max.
250
1.5
2.5
1
1
-
-
-
-
100
150
20
12
3
Unit
GHz
REF.
A
A
dB
K
pF
F
A
B
C
D
E
F
V
V
V
2SC4226
0.1A , 20V
1
Base
Top View
Min.
1.80
1.80
1.15
0.80
1.20
0.20
I
I
I
V
V
V
V
V
V
Millimeter
E
A
C
C
E
3
=100μA, I
CB
EB
CE
CE
CE
CE
=100μA, I
=1mA, I
L
=1V, I
=10V, I
=3V, I
=3V, I
=3V, I
=3V, I
2
Testing Condition
Max.
2.20
2.45
1.35
1.10
1.40
0.40
SOT-323
G
C B
C
C
E
E
C
B
Collector
=0
=7mA
=7mA
=0, f=1MHz
=7mA, f=1GHz
=0
E
D
Emitter
C
E
=0
=0
=0
REF.
G
H
K
J
L
Unit
H
mW
mA
℃
V
V
V
1
Min.
0.08
0.100 REF.
0.525 REF.
0.650 TYP.
-
Millimeter
2
Page 1 of 3
Max.
0.25
3
-
J
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2SC4226_11 Summary of contents
Page 1
Elektronische Bauelemente FEATURE Low noise ● High gain ● Power dissipation.(P =150mW) ● C APPLICATIONS High frequency low noise amplifier. ● CLASSIFICATION 2SC4226-P Product-Rank 40~80 Range r23 Marking PACKAGE INFORMATION Package MPQ SOT-323 3K ABSOLUTE MAXIMUM RATINGS ...
Page 2
Elektronische Bauelemente CHARACTERISTIC CURVES 24-Feb-2011 Rev. B 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Page ...
Page 3
Elektronische Bauelemente CHARACTERISTIC CURVES 24-Feb-2011 Rev. B 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Page ...