2N6027RLRM ONSEMI [ON Semiconductor], 2N6027RLRM Datasheet - Page 2

• Manufacturer Part Number: 2N6027RLRM
• Description: Programmable Unijunction Transistor
• Manufacturer: ONSEMI [ON Semiconductor]

*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes
*Peak Current
*Offset Voltage
*Valley Current
*Gate to Anode Leakage Current
Gate to Cathode Leakage Current
*Forward Voltage (I F = 50 mA Peak) (1)
*Peak Output Voltage
Pulse Voltage Rise Time
(
(V S = 10 Vdc, R G = 1 M
(V S = 10 Vdc, R G = 10 k ohms
(V S = 10 Vdc, R G = 1 M
(V S = 10 Vdc, R G = 10 k ohms
(V S = 10 Vdc, R G = 1 M
(V S = 10 Vdc, R G = 10 k ohms
(V S = 10 Vdc, R G = 200 ohms
(V S = 40 Vdc, T A = 25 C, Cathode Open)
(V S = 40 Vdc, T A = 75 C, Cathode Open)
(V S = 40 Vdc, Anode to Cathode Shorted)
(V G = 20 Vdc, C C = 0.2 F)
(V B = 20 Vdc, C C = 0.2 F)
t
1/16 from case, 10 secs max)
Characteristic
300 sec, Duty Cycle
Characteristic
(T C = 25 C unless otherwise noted.)
2N6027
2N6028
2N6027
2N6028
2N6027
2N6028
(Both Types)
2N6027
2N6028
2N6027
2N6028
2N6027
2N6028
2%.
2N6027, 2N6028
http://onsemi.com
2
Fig. No.
2,9,11
1,4,5
1,6
3,7
—
—
1
3
Symbol
I GAO
I GKS
V T
V F
V o
I P
I V
t r
Symbol
R JC
R JA
T L
Min
0.2
0.2
0.2
1.5
1.0
6.0
70
25
—
—
—
—
—
—
—
—
—
—
—
1.25
0.08
0.70
0.70
0.50
0.35
Typ
150
150
4.0
1.0
3.0
5.0
0.8
Max
18
18
11
40
200
260
—
—
75
Max
0.15
2.0
5.0
1.0
1.6
0.6
0.6
1.5
50
25
—
—
—
—
10
—
50
—
80
Unit
C/W
C/W
C
nAdc
nAdc
Volts
Volts
Unit
Volt
mA
ns
A
A