2N60-TA3-R UTC [Unisonic Technologies], 2N60-TA3-R Datasheet - Page 2

• Manufacturer Part Number: 2N60-TA3-R
• Description: 2 Amps, 600 Volts N-CHANNEL MOSFET
• Manufacturer: UTC [Unisonic Technologies]

2N60
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current Continuous
Drain Current Pulsed (Note 2)
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
Total Power Dissipation
Junction Temperature
Storage Temperature
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, I
4. I
ABSOLUTE MAXIMUM RATINGS (
THERMAL DATA
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SD
≤ 2.4A, di/dt ≤ 200A/µs, V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
AS
PARAMETER
=2.0A, V
PARAMETER
DD
=50V, R
Reverse
Forward
DD
≤ BV
G
=25 Ω, Starting T
DSS
SYMBOL
△BV
T
T
Repetitive(Note 2)
Single Pulse(Note 3)
T
Derate above 25°C
R
V
BV
C
C
△
C
C
C
C
I
I
GS(TH)
DS(ON)
, Starting T
g
DSS
GSS
OSS
RSS
= 25°C
= 100°C
= 25°C
FS
ISS
DSS
T
DSS
J
T
(T
C
/
J
= 25℃, unless otherwise specified)
V
V
V
V
V
I
V
V
V
V
=25℃, unless Otherwise specified.)
D
PACKAGE
GS
DS
DS
GS
GS
DS
GS
DS
DS
TO-220F
TO-220F
= 250 µA
TO-251
TO-252
TO-220
TO-251
TO-252
TO-220
J
J
=25V, V
= 600V, V
= 480V, T
= V
= 50V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 25°C
= 25°C
TEST CONDITIONS
GS
, I
D
D
D
D
GS
= 250µA
DS
= 250µA
DS
= 1A (Note 1)
=1A
C
GS
=0V, f =1MHz
SYMBOL
SYMBOL
= 0V
= 125°C
= 0V
= 0V
V
dv/dt
V
T
E
E
θ
θ
I
I
P
T
GSS
I
STG
DSS
AR
DP
AR
JA
D
AS
Jc
D
J
MIN
-55 ~ +150
600
RATINGS
RATINGS
2.0
+150
1.26
0.36
600
140
112
112
±30
2.0
2.0
8.0
4.5
4.5
54
54
12
12
45
4
4
Power MOSFET
TYP
2.25
270
0.4
3.8
40
5
MAX
-100
100
100
350
4.0
10
50
QW-R502-053,E
5
7
UNIT
UNIT
℃/W
W/℃
V/ns
2 of 8
mJ
mJ
℃
℃
UNIT
W
V
V
A
A
A
A
V/℃
µA
µA
nA
nA
pF
pF
pF
V
V
Ω
S