2SA1451A_06 TOSHIBA [Toshiba Semiconductor], 2SA1451A_06 Datasheet
2SA1451A_06
Related parts for 2SA1451A_06
2SA1451A_06 Summary of contents
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) High-Speed, High-Current Switching Applications • Low collector saturation voltage : V = −0.4 V (max − (sat) C • High-speed switching 1.0 μs (typ.) stg • ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Note: h classification ...
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I – Common −80 −70 −60 −10 emitter Tc = 25°C −50 −8 −40 −30 −6 −20 − −10 mA − −2 −4 −6 −8 −10 Collector-emitter voltage V ( ...
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V – (sat) C −5 Common emitter − −55°C −1 −0.5 100 25 −0.3 −0.1 −0.1 −0.3 −1 −3 Collector current I (A) C 100 Curves should be applied in ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...