2SA1432_09 TOSHIBA [Toshiba Semiconductor], 2SA1432_09 Datasheet
2SA1432_09
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2SA1432_09 Summary of contents
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage −300 V, V CBO • Low saturation voltage (sat) ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Note 2: h classification 90 ...
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I – −100 −10 −5 Common emitter − 25°C −2 −80 −1 −0.8 −60 −0.6 −0.4 −40 −0.3 −20 −0 −0 −2 −4 −6 −8 −10 Collector-emitter voltage ...
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1000 Common emitter 500 −10 V 300 Ta = 25° −10 V 100 50 30 −1 10 −0.1 −0.3 −1 −3 −10 Collector current I (mA – ...
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P – 1.4 1.2 1.0 0.8 0.6 0.4 0 100 120 Ambient temperature Ta (°C) −0.5 −0 max (pulsed max (continuous) −0.1 −0.05 −0.03 −0.01 −0.005 −0.003 *: ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...