2SK3994_09 TOSHIBA [Toshiba Semiconductor], 2SK3994_09 Datasheet
![no-image](/images/no-image-200.jpg)
2SK3994_09
Related parts for 2SK3994_09
2SK3994_09 Summary of contents
Page 1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π−MOS V) Switching Regulator, DC/DC Converter Applications Motor Drive Applications Low drain−source ON-resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement mode : V = ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time ...
Page 3
I – Common source Tc = 25°C Pulse test Drain−source voltage V ( – ...
Page 4
R – (ON) 0.3 Common source Pulse test 0. 0.12 0.06 0 −80 − Case temperature Tc (°C) Capacitance – 30000 ...
Page 5
Safe operating area 100 max I D (pulse) * max I D (continuous) * DC operation 1 Tc=25 ℃ 0.1 * Single nonrepetitive Ta=25 ℃ Curves must be derated linealy with increase in V DSS temperature. ...
Page 6
RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...