ZXTDE4M832TC ZETEX [Zetex Semiconductors], ZXTDE4M832TC Datasheet - Page 4

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ZXTDE4M832TC

Manufacturer Part Number
ZXTDE4M832TC
Description
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
ZXTDE4M832
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
= 25°C unless otherwise stated).
MIN.
100
200
300
110
100
7.5
80
60
20
4
TYP.
1128
1.09
0.96
11.5
180
110
145
160
240
450
450
170
160
8.2
15
45
90
30
10
86
MAX.
1.175
1.05
185
200
325
900
25
25
25
20
60
18
UNIT
MHz
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
V
V
V
V
V
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CE
CB
CC
=100 A
=100 A
=10mA*
=0.1A, I
=0.5A, I
=1A, I
=1.5A, I
=3.5A, I
=3.5A, I
=3.5A, V
=10mA, V
=200mA, V
=1A, V
=1.5A, V
=3A, V
=5A, V
=50mA, V
=I
=6V
=65V
=80V
=10V, f=1MHz
=10V, I
ISSUE 1 - JUNE 2002
B2
=25mA
B
CE
CE
CE
=20mA
B
B
B
B
B
CE
CE
=10mA*
=50mA*
=50mA
=300mA
=300mA*
=2V*
=2V*
=2V*
C
CE
CE
=1A
=2V*
=2V*
CE
=2V*
=10V
=2V*

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