2SA1417_0608 SANYO [Sanyo Semicon Device], 2SA1417_0608 Datasheet
2SA1417_0608
Manufacturer Part Number
2SA1417_0608
Description
High-Voltage Switching Applications
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet
1.2SA1417_0608.pdf
(5 pages)
Ordering number : EN2006C
2SA1417 / 2SC3647
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
* ; The 2SA1417 / 2S3647 are classified by 100mA h FE as follws:
Marking 2SA1417: AC
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
•
•
•
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.
Rank
2SC3647: CC
h FE
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
100 to 200
( ) : 2SA1417
R
140 to 280
S
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
Tj
f T
80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS
SANYO Semiconductors
2SA1417 / 2SC3647
200 to 400
Mounted on a ceramic board (250mm
V CB =(--)100V, I E =0A
V EB =(--)4V, I C =0A
V CE =(--)5V, I C =(- -)100mA
V CE =(--)10V, I C =(--)100mA
V CB =(--)10V, f=1MHz
I C =(--)1A, I B =(- -)100mA
I C =(--)1A, I B =(- -)100mA
T
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Applications
Conditions
Conditions
2
0.8mm)
DATA SHEET
min
100*
(--0.22)0.13
Ratings
(--)0.85
typ
(25)16
Ratings
120
Continued on next page.
--55 to +150
(- -0.6)0.4
max
(- -)120
(- -)100
(--)100
(--)100
(--)1.2
400*
(- -)6
(- -)2
(- -)3
500
150
1.5
No.2006-1/5
Unit
mW
Unit
MHz
nA
nA
pF
W
V
V
V
A
A
V
V
C
C
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2SA1417_0608 Summary of contents
Page 1
Ordering number : EN2006C 2SA1417 / 2SC3647 Features Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. • Specifications ( ) : 2SA1417 Absolute ...
Page 2
Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Package Dimensions unit : mm 7007A-004 Top View 4.5 1 0.4 0.5 1.5 3.0 0. ...
Page 3
--1.0 --0.8 --0.6 --0.4 --0 Collector-to-Emitter Voltage 2.4 -- 2.0 -- 1.6 -- ...
Page 4
V CE (sat 1000 2SA1417 = 100 0.01 0.1 Collector Current, ...
Page 5
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products ...