2SA1386_07 SANKEN [Sanken electric], 2SA1386_07 Datasheet
2SA1386_07
Manufacturer Part Number
2SA1386_07
Description
Silicon PNP Epitaxial Planar Transistor
Manufacturer
SANKEN [Sanken electric]
Datasheet
1.2SA1386_07.pdf
(1 pages)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A)
18
Symbol
V
V
V
I
I
P
Tj
T
C
B
stg
3 0 0
1 0 0
Absolute maximum ratings
CBO
CEO
EBO
C
Typical Switching Characteristics (Common Emitter)
1 0
V
–40
– 0 . 0 2
(V)
– 1 5
– 1 0
CC
– 5
60
40
20
0
0
0 . 0 2
0
2SA1386
I
h
C
LAPT
FE
f
–160
–160
– V
130(Tc=25°C)
T
–55 to +150
– I
– I
C E
C o l l e c t o r - E m i t te r V o l ta g e V
Ratings
C
– 0 . 1
E
(Ω)
–15
150
R
–5
–4
4
Characteristics (Typical)
Characteristics (Typical)
Characteristics (Typical)
L
– 1
0 . 1
2SA1386A
C o l l e c t o r C u rre n t I
Em i t t e r Cu r re n t I
–180
–180
–10
– 0 .5
(A)
I
C
– 2
(Ta=25°C)
Unit
– 1
2SA1386/1386A
°C
°C
W
V
V
V
A
A
1
E
C
( A )
(A )
V
–10
(V)
–3
BB1
CE
(V
(V )
C E
Symbol
I
I
V
h
V
f
C
CBO
EBO
T
(V
FE
Electrical Characteristics
(BR)CEO
CE
–5
=–12V )
OB
C E
(sat)
=–4V )
–10
V
–4
(V)
10
BB2
5
–15
V
V
I
V
C
CB
CE
CE
h
=–5A, I
200
100
–0.0 5
=–10V, f=1MHz
Conditions
FE
50
20
I
=–4V, I
=–12V, I
– 0.5
– 0.1
–0.02
V
C
– 40
– 10
V
=–25mA
(A)
–5
–1
I
–1
–3
–2
–1
EB
– I
B1
0
–3
C E
h
0
=–5V
Safe Operating Area (Single Pulse)
C
FE
B
( s a t ) – I
=–0.5A
Temperature Characteristics (Typical)
C
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
V
=–5A
E
=2A
CB
–10
–0.2
C ol lec tor - Em i tter Voltage V
–0.1
=
(A)
I
Bas e C ur r ent I
B2
1
Without Heatsink
Natural Cooling
C ol lec tor C ur r ent I
1.2SA1386
2.2SA1386A
B
–5A
Characteristics (Typical)
–0.4
2SA1386
–100
–160
–160
0.3typ
–0.5
( s)
t
I
max
min
on
C
125˚ C
–30˚ C
25˚ C
= –10A
B
( A)
Ratings
–100
–2.0
–0.6
50
500
40
–50
–1
min
typ
max
typ
C
max
2SA1386A
( A)
0.7typ
–100
–180
( s)
t
–180
stg
C E
–0.8
–100
(V )
max
min
( V
–5
(Ta=25°C)
C E
1
=–4V)
0.2typ
–1.0
–10 –15
–200
( s)
MHz
t
2
Unit
f
pF
V
V
V
A
A
Application : Audio and General Purpose
0.5
0.1
–15
–10
3
1
130
100
I
3.5
1
50
External Dimensions MT-100(TO3P)
C
–5
0
0
– V
0
0
Pc – T a Derating
j- a
W i thout Heatsi nk
BE
– t Characteristics
5.45
25
Temperature Characteristics (Typical)
A mbi ent Tem perature Ta(˚ C)
±0.1
Base- Em ittor Voltage V
a
b
B
10
15.6
50
9.6
C
±0.4
Ti m e t( ms )
E
75
–1
3
5.45
1.05
2
ø3.2
±0.1
+0.2
-0.1
Weight : Approx 6.0g
a. Part No.
b. Lot No.
100
±0.1
100
B E
4.8
( V)
±0.2
( V
12 5
C E
0.65
1.4
2.0
=–4V )
±0.1
+0.2
-0.1
1000 2000
150
–2
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