2SK3815_07 SANYO [Sanyo Semicon Device], 2SK3815_07 Datasheet - Page 2

• Manufacturer Part Number: 2SK3815_07
• Description: N-Channel Silicon MOSFET General-Purpose Switching Device Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7513-002
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
PW=10µs
D.C.
V IN
≤
Parameter
1%
0.8
2.55
1
V IN
10.2
2
G
50Ω
3
2.55
V DD =30V
D
1.2
S
I D =12A
R L =2.5Ω
V (BR)DSS
2SK3815
R DS (on)1
R DS (on)2
V GS (off)
Symbol
4.5
t d (on)
t d (off)
⏐ yfs ⏐
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
Qg
t r
t f
0.4
V OUT
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
1.3
I D =1mA, V GS =0V
V DS =60V, V GS =0V
V GS = ±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =12A
I D =12A, V GS =10V
I D =12A, V GS =4V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =30V, V GS =10V, I D =23A
V DS =30V, V GS =10V, I D =23A
V DS =30V, V GS =10V, I D =23A
I S =23A, V GS =0V
2SK3815
Conditions
Package Dimensions
unit : mm (typ)
7001-003
Unclamped Inductive Test Circuit
15V
0V
2.55
0.8
2.55
1
2
10.2
3
1.2
50Ω
2.55
≥50Ω
RG
2.55
min
1.2
60
9
Ratings
typ
1.04
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
775
125
105
2.5
4.1
15
42
60
85
72
78
19
11
DUT
4.5
L
max
1.3
0 to 0.3
0.4
±10
2.6
1.5
55
85
1
No.8053-2/5
Unit
mΩ
mΩ
µ
µ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V DD
A
A