2SK3712-Z NEC [NEC], 2SK3712-Z Datasheet

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2SK3712-Z

Manufacturer Part Number
2SK3712-Z
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC [NEC]
Datasheet

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Part Number
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Part Number:
2SK3712-Z
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No. D16372EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
• High voltage: V
• Gate voltage rating: ±30 V
• Low on-state resistance
• Low C
• Built-in gate protection diode
• TO-251/TO-252 package
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Current
Repetitive Pulse Avalanche Energy
Notes 1. PW ≤ 10
The 2SK3712 is N-channel MOS FET device that features a low
R
DS(on)
2. Starting T
3. T
iss
= 0.58 Ω MAX. (V
: C
ch(peak)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 450 pF TYP. (V
DSS
≤ 150°C, L = 100
µ
ch
s, Duty cycle ≤ 1%
= 250 V
Note1
C
= 25°C, V
= 25°C)
Note2
Note2
DS
C
A
GS
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
Note3
= 10 V, I
DD
DS
N-CHANNEL POWER MOS FET
= 125 V, R
Note3
µ
= 10 V, I
H
D
= 4.5 A)
The mark
A
= 25°C)
D
I
G
I
D(pulse)
= 0 A)
V
V
D(DC)
E
E
P
P
T
T
I
I
= 25
DSS
GSS
AS
AR
stg
AR
T1
T2
AS
SWITCHING
ch
DATA SHEET
shows major revised points.
, V
–55 to +150
GS
MOS FIELD EFFECT TRANSISTOR
±9.0
= 20 → 0 V, L = 100
250
±30
±27
150
1.0
8.1
8.1
40
9
9
mJ
mJ
°C
°C
W
W
V
V
A
A
A
A
ORDERING INFORMATION
PART NUMBER
µ
2SK3712-Z
H
2SK3712
2SK3712
(TO-251)
(TO-252)
TO-252 (MP-3Z)
TO-251 (MP-3)
PACKAGE
2002

Related parts for 2SK3712-Z

2SK3712-Z Summary of contents

Page 1

... 8 Note3 E 8 → 100 = 125 Ω µ H The mark shows major revised points. 2SK3712 ORDERING INFORMATION PART NUMBER PACKAGE TO-251 (MP-3) 2SK3712 TO-252 (MP-3Z) 2SK3712-Z (TO-251) (TO-252) µ H 2002 ...

Page 2

... µ di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ µ ≤ Duty Cycle 1% Data Sheet D16372EJ2V0DS 2SK3712 MIN. TYP. MAX. UNIT µ µ A ±10 2.5 3.5 4 Ω 0.45 0.58 450 pF 100 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 100 µ 1000 = 25° 125°C/W th(ch-A) = 25° 3.125°C/W th(ch- 100m Pulse Width - s Data Sheet D16372EJ2V0DS 2SK3712 50 75 100 125 150 175 - Case Temperature - ° 100 1000 3 ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.3 Pulsed 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0 100 V - Gate to Source Voltage - V GS Data Sheet D16372EJ2V0DS 2SK3712 = −25° 25°C 75°C 125°C 150° Gate to Source Voltage - V 0 100 I - Drain Current - 9 4.5 A 1.8 A ...

Page 5

... Q - Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 di/dt = 100 A/ µ 100 10 1 1.5 0 Diode Forward Current - A F Data Sheet D16372EJ2V0DS 2SK3712 C iss C oss C rss 10 100 1000 200 V 125 V 62 ...

Page 6

... 8 0.01 0 Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 125 Ω → ≤ Starting T - Starting Channel Temperature - °C ch Data Sheet D16372EJ2V0DS 2SK3712 75 100 125 150 ...

Page 7

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2) TO-252 (MP-3Z) 6.5 ±0.2 5.0 ±0 1.1 ±0.2 2.3 2.3 Data Sheet D16372EJ2V0DS 2SK3712 2.3 ±0.2 0.5 ±0.1 0.9 0.8 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 7 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3712 M8E 02. 11-1 ...

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