2SK3703_06 SANYO [Sanyo Semicon Device], 2SK3703_06 Datasheet

2SK3703_06

Manufacturer Part Number

2SK3703_06

Description

General-Purpose Switching Device Applications

Manufacturer

SANYO [Sanyo Semicon Device]

Datasheet

1.2SK3703_06.pdf (5 pages)

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Ordering number : EN7681A

2SK3703

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Note : *1 V DD =20V, L=200 H, I AV =30A

Electrical Characteristics at Ta=25 C

Marking : K3703

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

4V drive.

Ultrahigh-speed switching.

Motor drive, DC / DC converter.

Avalanche resistance guarantee.

*2 L 200 H, Single pulse

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

E AS

Tstg

I DP

Tch

I AV

P D

yfs

I D

SANYO Semiconductors

PW 10 s, duty cycle 1%

Tc=25 C

I D =1mA, V GS =0V

V DS =60V, V GS =0V

V GS = 16V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =15A

I D =15A, V GS =10V

I D =15A, V GS =4V

2SK3703

Conditions

72506QA MS IM TC-00000067 / 61504 TS IM TA-100813

Conditions

DATA SHEET

min

1.2

Ratings

typ

Ratings

Continued on next page.

--55 to +150

max

120

150

135

2.0

2.6

No.7681-1/5

Unit

Related parts for 2SK3703_06

2SK3703_06 Summary of contents

Page 1

Ordering number : EN7681A 2SK3703 Features Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive converter. • Avalanche resistance guarantee. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current ...

Page 2

Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm (typ) 7508-003 ...

Page 3

0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain-to-Source Voltage (on ...

Page 4

=30V =30A Total Gate Charge 2.5 2.0 1.5 ...

Page 5

Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and ...

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