2SC5772FR-TL-E RENESAS [Renesas Technology Corp], 2SC5772FR-TL-E Datasheet

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2SC5772FR-TL-E

Manufacturer Part Number
2SC5772FR-TL-E
Description
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5772FR-TL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
2SC5772
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
Features
Outline
Note: Marking is “FR-”.
Absolute Maximum Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* When using aluminum ceramic board (25 x 60 x 0.7 mm)
This data sheet contains tentative specification for new product development. It may partially be subject to change
without notice.
Rev.2.00 Aug 10, 2005 page 1 of 12
High gain bandwidth product
f
High power gain and low noise figure ;
PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz
T
= 9 GHz typ.
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
Item
3
Symbol
V
V
V
Tstg
Pc
CBO
CEO
EBO
I
Tj
C
2
1
–55 to +150
Ratings
700*
150
1.5
15
75
9
(Previous ADE-208-1390)
1. Emitter
2. Base
3. Collector
REJ03G0755-0200
Aug.10.2005
Unit
mW
mA
Preliminary
V
V
V
(Ta = 25°C)
C
C
Rev.2.00

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2SC5772FR-TL-E Summary of contents

Page 1

Silicon NPN Epitaxial VHF/UHF wide band amplifier Features High gain bandwidth product GHz typ. T High power gain and low noise figure ; typ 1.1 dB typ ...

Page 2

Electrical Characteristics Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Reverse transfer capacitance Gain bandwidth product S parameter 21 Power gain Noise figure Rev.2.00 Aug ...

Page 3

Main Characteristics Collector Power Dissipation Curve 1000 When using aluminum ceramic board mm 0.7 mm 800 400 200 0 50 100 Ambient Temperature Collector Output Capacitance vs. Collector to Base Voltage ...

Page 4

Rev.2.00 Aug 10, 2005 page Parameter vs. Collector Current GHz Collector Current ...

Page 5

S11 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Condition 100 to 2000 MHz (100 MHz Step mA) ...

Page 6

S11 Parameter vs. Frequency –.2 –.4 –.6 –.8 –1 Condition 100 to 2000 MHz (100 MHz Step mA) ...

Page 7

Sparameter S11 f (MHz) MAG ANG 100 0.651 -53.8 200 0.502 -93.8 300 0.431 -119.6 400 0.396 -136.4 500 0.381 -149.9 600 0.364 -158.7 700 0.365 -167.2 800 0.364 -174.6 900 0.362 179.5 1000 0.362 173.4 1100 0.366 168.8 ...

Page 8

S11 f (MHz) MAG ANG 100 0.419 -90.2 200 0.366 -132.9 300 0.358 -151.9 400 0.355 -163.8 500 0.354 -173.3 600 0.356 -178.8 700 0.356 174.3 800 0.364 169.5 900 0.361 165.9 1000 0.359 160.6 1100 0.367 157.8 1200 ...

Page 9

S11 f (MHz) MAG ANG 100 0.365 -111.0 200 0.363 -147.7 300 0.370 -162.8 400 0.368 -172.3 500 0.374 -179.4 600 0.375 174.9 700 0.378 170.4 800 0.383 165.8 900 0.381 161.7 1000 0.384 157.4 1100 0.389 153.7 1200 ...

Page 10

S11 f (MHz) MAG ANG 100 0.505 -66.9 200 0.381 -108.9 300 0.337 -132.7 400 0.320 -148.4 500 0.311 -161.0 600 0.305 -168.4 700 0.308 -176.8 800 0.306 177.7 900 0.311 172.1 1000 0.309 166.8 1100 0.313 163.3 1200 ...

Page 11

S11 f (MHz) MAG ANG 100 0.360 -99.4 200 0.329 -139.8 300 0.323 -157.8 400 0.323 -168.1 500 0.326 -176.6 600 0.328 177.5 700 0.326 172.1 800 0.332 166.9 900 0.335 163.3 1000 0.336 159.3 1100 0.338 155.0 1200 ...

Page 12

... A-A Section Ordering Information Part Name 2SC5772FR-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page Package Name MASS[Typ.] MPAK(T) / MPAK(T)V, 0.011g ...

Page 13

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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