2SA1244_07 TOSHIBA [Toshiba Semiconductor], 2SA1244_07 Datasheet

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2SA1244_07

Manufacturer Part Number
2SA1244_07
Description
High Current Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
High Current Switching Applications
Absolute Maximum Ratings
Low collector saturation voltage: V
High speed switching time: t
Complementary to 2SC3074
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Ta = 25°C
Tc = 25°C
stg
= 1.0 μs (typ.)
CE (sat)
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
j
2SA1244
= −0.4 V (max) (I
−55 to 150
Rating
−60
−50
150
1.0
−5
−5
−1
20
1
C
= −3 A)
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1A
2-7J1A
2006-11-09
2SA1244
Unit: mm

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2SA1244_07 Summary of contents

Page 1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications • Low collector saturation voltage: V • High speed switching time: t stg • Complementary to 2SC3074 Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Note: h classification ...

Page 3

I – −8 Common emitter − 25°C −70 −6 −60 −50 −4 −40 −30 −2 − − −2 −4 −6 Collector-emitter voltage – ...

Page 4

V – (sat) C −10 Common emitter − − −55°C −1 −0.5 25 −0.3 100 −0.1 −0.03 −0.1 −0.3 −1 −3 Collector current I (A) C Safe Operating Area −10 ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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