2SA1235A_08 BILIN [Galaxy Semi-Conductor Holdings Limited], 2SA1235A_08 Datasheet
2SA1235A_08
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2SA1235A_08 Summary of contents
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BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Small collector to emitter saturation voltage V =-0.3V max(@I =-100mA,I CE(sat) C Excellent lineary DC forward current gain. Super mini package for easy mounting. APPLICATIONS PNP epitaxial type transistor designed for low ...
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BL Galaxy Electrical Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure CLASSIFICATION OF ...
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BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package SOLDERING FOOTPRINT PACKAGE INFORMATION Device Package 2SA1235A SOT-23 Document number: BL/SSSTC094 Rev.A Unit : mm Shipping 3000/Tape&Reel Production specification 2SA1235A SOT-23 SOT-23 Dim Min Max A 2.85 ...