2SC5624VH-TL-E RENESAS [Renesas Technology Corp], 2SC5624VH-TL-E Datasheet - Page 2

• Manufacturer Part Number: 2SC5624VH-TL-E
• Description: Silicon NPN Epitaxial High Frequency Low Noise Amplifier
• Manufacturer: RENESAS [Renesas Technology Corp]

2SC5624
Electrical Characteristics
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Main Characteristics
Rev.3.00, Feb.21.2005, page 2 of 6
200
150
100
Item
50
0
Maximum Collector Dissipation Curve
Ambient Temperature
50
Symbol
Cob
100
I
I
I
PG
h
NF
CBO
CEO
EBO
f
FE
T
150
Min
Ta (°C)
80
25
14
—
—
—
—
—
200
Typ
120
0.3
1.2
28
18
—
—
—
200
Max
100
160
0.6
1.6
10
—
—
1
1
0
1
DC Current Transfer Ratio vs.
2
Collector Current
Unit
GHz
pF
dB
dB
A
A
A
Collector Current
5
V
V
V
V
V
V
V
V
CB
CE
EB
CE
CB
CE
CE
CE
= 0.8 V, I
10
= 8 V, I
= 3 V, R
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
Test Conditions
20
I
E
C
E
C
C
C
C
BE
= 0
= 0, f = 1 MHz
= 20 mA
= 30 mA, f = 2 GHz
= 30 mA, f = 1.8 GHz
= 5 mA, f = 1.8 GHz
C
V
(mA)
= 0
CE
=
50
= 2 V
100
(Ta = 25°C)