2SA1203_07 TOSHIBA [Toshiba Semiconductor], 2SA1203_07 Datasheet

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2SA1203_07

Manufacturer Part Number
2SA1203_07
Description
Audio Frequency Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1203_07.pdf (4 pages)
Audio Frequency Amplifier Applications
•
•
•
•
Absolute Maximum Ratings
Suitable for output stage of 3 watts amplifier
Small flat package
P
Complementary to 2SC2883
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note 1: Mounted on a ceramic substrate (250 mm
Note 2: Using continuously under heavy loads (e.g. the application of
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
(Ta = 25°C)
Symbol
V
V
V
T
P
P
CBO
CEO
EBO
I
I
(Note 1)
T
stg
C
B
C
C
2SA1203
j
2
−55 to 150
× 0.8 t)
Rating
1000
−1.5
−0.3
−30
−30
500
150
−5
1
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
PW-MINI
2-5K1A
SC-62
2006-11-09
―
2SA1203
Unit: mm

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2SA1203_07 Summary of contents

Page 1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications • Suitable for output stage of 3 watts amplifier • Small flat package • 1.0 to 2.0 W (mounted on a ceramic substrate) C • Complementary ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 3: h classification O: 100 to 200, Y: 160 to 320 ...

Page 3

I – −10 −8 Common emitter −6 −1 25°C −4 −0.8 −3 −2 −0 − −4 −8 −12 0 Collector-emitter voltage – (sat) C ...

Page 4

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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