2SC5585_11 SECOS [SeCoS Halbleitertechnologie GmbH], 2SC5585_11 Datasheet
2SC5585_11
Manufacturer Part Number
2SC5585_11
Description
NPN Silicon General Purpose Transistor
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.2SC5585_11.pdf
(2 pages)
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. B
FEATURES
Application
MARKING
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
High Current.
Low V
Complement of 2SC4738.
General Purpose Amplification.
BX
Package
SOT-523
CE(sat)
Parameter
Elektronische Bauelemente
. V
Parameter
CE(sat)
≦0.25V (@I
MPQ
3K
Symbol
C
V
V
V
V
=200mA / I
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
h
CBO
EBO
f
FE
T
ob
A suffix of “-C” specifies halogen and lead free
(T
LeaderSize
A
(T
Symbol
= 25° C unless otherwise specified)
A
7’ inch
T
J
V
V
= 25°C unless otherwise specified)
V
, T
P
RoHS Compliant Product
CBO
CEO
I
EBO
B
C
C
=10mA)
STG
Min.
270
15
12
6
-
-
-
-
-
Typ.
320
7.5
-
-
-
-
-
-
-
NPN Silicon General Purpose Transistor
150, -55 ~ 150
Max.
0.25
680
0.1
0.1
Ratings
-
-
-
-
-
500
150
15
12
6
K
F
REF.
Unit
MHz
A
B
C
D
E
F
2SC5585
μA
μA
pF
Any changes of specification will not be informed individually.
V
V
V
V
1
0.5A , 15V
Top View
E
A
M
3
Min.
1.45
0.75
0.15
Base
1.5
0.7
0.9
Millimeter
L
I
I
I
V
V
V
I
V
V
1
C
C
E
C
2
=10μA, I
=1mA, I
=10μA, I
CB
EB
CE
=200mA, I
CE
CB
=15V, I
=6V, I
=2V, I
=2V, I
=10V, I
G
Max.
1.75
0.85
0.25
1.7
0.9
1.1
Test Conditions
C B
SOT-523
D
C
C
C
Collector
B
Emitter
E
C
=0
=10mA
=10mA, f=100MHz
=0
E
E
=0
=0
=0
=0, f=1MHz
REF.
B
2
3
G
H
K
M
J
L
=10mA
H
1
Unit
Min.
0.25
mW
mA
0.1
℃
-
V
V
V
Millimeter
0.55 REF.
0.5 TYP.
2
-
Page 1 of 2
0.325
Max.
0.1
0.2
3
J
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2SC5585_11 Summary of contents
Page 1
Elektronische Bauelemente FEATURES High Current. Low ≦0.25V (@I CE(sat) CE(sat) Complement of 2SC4738. Application General Purpose Amplification. MARKING BX PACKAGE INFORMATION Package MPQ SOT-523 3K ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage ...
Page 2
Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. B 2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Any changes of specification will not be informed individually. Page ...