2SK3462_06 TOSHIBA [Toshiba Semiconductor], 2SK3462_06 Datasheet
2SK3462_06
Manufacturer Part Number
2SK3462_06
Description
Switching Regulator, DC/DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3462_06.pdf
(6 pages)
Switching Regulator, DC/DC Converter and
Motor Drive Applications
•
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
4 V gate drive
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
temperature
Characteristic
DD
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
= 50 V, T
GS
DC
Pulse (t = 1 ms)
DSS
= 20 kΩ)
th
ch
= 1.5~3.5 V (V
= 25°C, L = 6.7 mH, I
(Note 1)
(Note 1)
(Note 2)
= 100 μA (V
DS (ON)
fs
(Ta = 25°C)
| = 2.2 S (typ.)
Symbol
DS
V
V
V
DS
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
R
R
D
Symbol
2SK3462
= 250 V)
th (ch-a)
= 10 V, I
th (ch-c)
= 1.2 Ω (typ.)
AR
= 3 A, R
D
−55~150
Rating
= 1 mA)
36.2
250
250
±20
150
20
3
6
3
2
1
Max
6.25
125
G
= 25 Ω
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
Unit
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1B
2-7J1B
SC-64
SC-64
2006-11-21
―
―
2SK3462
Unit: mm
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2SK3462_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) Switching Regulator, DC/DC Converter and Motor Drive Applications • gate drive • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 ...
Page 2
Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...
Page 3
I – Common source 25°C 10 Pulse test Drain-source voltage V ( – Common ...
Page 4
R – (ON) 5 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – ...
Page 5
Duty = 0.5 0.5 0.2 0.3 0.1 0.05 0.1 0.02 0.05 0.03 0.01 0.01 10 μ 100 μ Safe operating area 100 max (pulsed 100 μ ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...