2SA1201_07 TOSHIBA [Toshiba Semiconductor], 2SA1201_07 Datasheet
2SA1201_07
Manufacturer Part Number
2SA1201_07
Description
Voltage Amplifier Applications Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1201_07.pdf
(4 pages)
Voltage Amplifier Applications
Power Amplifier Applications
•
•
•
•
•
Absolute Maximum Ratings
High voltage: V
High transition frequency: f
Small flat package
P
Complementary to 2SC2881
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note 1: Mounted on a ceramic substrate (250 mm
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
C
= 1 to 2 W (mounted on a ceramic substrate)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
CEO
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −120 V
T
= 120 MHz (typ.)
(Ta = 25°C)
Symbol
V
V
V
T
P
P
CBO
CEO
EBO
I
I
(Note 1)
T
stg
C
B
C
C
2SA1201
j
2
−55 to 150
× 0.8 t)
Rating
−120
−120
−800
−160
1000
500
150
−5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
PW-MINI
2-5K1A
SC-62
2006-11-09
―
2SA1201
Unit: mm
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2SA1201_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications • High voltage −120 V CEO • High transition frequency 120 MHz (typ.) T • Small flat package • ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 3: h classification 160, Y: 120 to 240 ...
Page 3
I – −800 −10 −7 Common emitter Ta = 25°C −5 −600 −4 −3 −400 −2 −200 − −4 −8 −12 Collector-emitter voltage – (sat) ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...