2SK3446TZ-E RENESAS [Renesas Technology Corp], 2SK3446TZ-E Datasheet - Page 2

• Manufacturer Part Number: 2SK3446TZ-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3446
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.8.00 Sep 07, 2005 page 2 of 6
2. Value at Ta = 25 C
3. Pulse test
10 s, duty cycle
Item
Item
1%
V
V
Symbol
V
R
R
Coss
(BR) DSS
(BR) GSS
Crss
t
Ciss
t
Qgs
Qgd
I
I
GS (off)
DS (on)
DS (on)
|y
V
d (on)
d (off)
Qg
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Symbol
V
V
Tstg
Min
150
Tch
0.5
0.8
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
GSS
I
DSS
DR
10
D
Note 2
Note 1
Typ
1.5
1.9
1.4
3.5
0.5
1.8
1.0
14
—
—
—
—
—
98
31
12
34
19
60
8
Max
1.95
1.5
2.5
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
1
–55 to +150
Value
150
150
0.9
Unit
10
1
4
1
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
I
R
I
I
di
D
G
D
D
D
D
D
F
F
GS
DS
DS
DS
GS
DD
GS
GS
L
F
= 1 A, V
= 1 A, V
= 10 mA, V
= 0.5 A, V
= 0.5 A, V
= 0.5 A, V
= 1 A
= 0.5 A
= 100 A, V
/dt = 100 A/ s
= 60
= 8 V, V
= 150 V, V
= 10 V, I
= 10 V
= 0
= 100 V
= 4 V
= 4 V
Test Conditions
GS
GS
GS
GS
DS
D
= 0
= 0
GS
DS
= 1 mA
GS
= 10 V
= 4 V
= 2.5 V
DS
Unit
= 0
= 0
(Ta = 25 C)
(Ta = 25 C)
W
V
V
A
A
A
= 0
C
C
= 0
Note 3
Note 3
Note 3