2SK3443_09 TOSHIBA [Toshiba Semiconductor], 2SK3443_09 Datasheet
2SK3443_09
Related parts for 2SK3443_09
2SK3443_09 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: ⎪Y • Low leakage current 100 μA (V DSS ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate ...
Page 3
I – Common source 25°C Pulse test Drain-source voltage V ( – ...
Page 4
R – (ON) 0.2 Common source 0. Pulse test 0.16 0.14 0. 0.1 0.08 0.06 0.04 0.02 0 −80 − ...
Page 5
Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.00001 0.0001 Safe operating area 300 I D max (pulsed) * 100 100 μ operation 25°C 3 ...
Page 6
RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...