2SA1188DTZ-E RENESAS [Renesas Technology Corp], 2SA1188DTZ-E Datasheet - Page 4

• Manufacturer Part Number: 2SA1188DTZ-E
• Description: Silicon PNP Epitaxial
• Manufacturer: RENESAS [Renesas Technology Corp]

2SA1188
Rev.3.00 Aug 10, 2005 page 4 of 6
–1,000
1,000
–100
–1.0
–0.1
–1.0
–0.3
–0.1
–10
300
100
–10
30
10
–3
Base to Emitter Saturation Voltage vs.
–1
–1
0
Emitter to Base Voltage V
I
Pulse
C
I
DC Current Transfer Ratio vs.
C
= 10 I
25
Collector Current I
Collector Current I
= 0
Emitter Cutoff Current vs.
Emitter to Base Voltage
–2
Ta = 75°C
–3
–3
25
B
Collector Current
Collector Current
Ta = 75°C
–25
–4
Ta = –25°C
–25
–10
–10
25
–6
V
Pulse
C
C
CE
–30
–30
(mA)
(mA)
= –12 V
–8
75
EB
(V)
–100
–100
–10
–0.03
–0.01
1,000
–190
–180
–170
–160
–150
–140
–1.0
–0.3
–0.1
500
200
100
Collector to Emitter Breakdown Voltage vs.
Collector to Emitter Saturation Voltage vs.
50
20
10
–0.5 –1.0 –2
10
–1
Base to Emitter Resistance R
V
I
Pulse
C
CE
= 10 I
Gain Bandwidth Product vs.
Base to Emitter Resistance
Collector Current I
Collector Current I
= –6 V
100
–3
B
Collector Current
Collector Current
Ta = 75°C
–10
1 k
–5
Typical Value
I
–10 –20
C
C
= –1 mA
C
25
–30
10 k
(mA)
(mA)
–25
BE
( )
100 k
–100
–50