2SK3439_09 TOSHIBA [Toshiba Semiconductor], 2SK3439_09 Datasheet - Page 2

• Manufacturer Part Number: 2SK3439_09
• Description: DC-DC Converter Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Marking
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Note 5: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Continuous drain reverse current
Pulse drain reverse current
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Note 6: I
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
K3439
I
DR
DR
Characteristics
Characteristics
1, I
2, I
DRP
DRP
Rise time
Turn-on time
Fall time
Turn-off time
1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
Part No.
(or abbreviation code)
Lot No.
Note 4
(Note 1, Note 6)
(Note 1, Note 6)
(Note 1, Note 6)
(Note 1, Note 6)
(Note 5) (Ta = 25°C)
Note 4: A line under a Lot No. identifies the indication of product Labels.
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of the
Council of 27 January 2003 on the restriction of the use of certain hazardous
V
R
Symbol
Symbol
(BR) DSS
V
DS (ON)
I
I
I
I
C
I
DRP
I
DRP
C
|Y
C
Q
Q
GSS
DSS
DR
DR
DS2F
V
Q
t
t
Q
t
oss
on
off
t
t
iss
rss
gd
rr
th
gs
fs
r
f
rr
g
1
2
|
1
2
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
V
V
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
dI
D
DR
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DR
= 10 mA, V
GS
2
1 = 75 A, V
= 75 A, V
(Note 6) (Ta = 25°C)
/dt = 50 A/μs
= ±16 V, V
= 30 V, V
= 10 V, I
= 10 V, I
= 4 V, I
= 10 V, I
= 10 V, V
≈ 34 V, V
10 V
0 V
Test Condition
Test Condition
D
w
V
D
D
D
GS
GS
GS
= 38 A
GS
GS
= 10 μs
DD
GS
= 1 mA
= 38 A
DS
= 38 A
⎯
⎯
⎯
⎯
= 0 V,
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
≈ 15 V
= 0 V
= 0 V
I
D
= 38 A
D
= 75 A
V
OUT
Min
Min
1.3
30
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5450
1850
Typ.
Typ.
620
110
116
120
180
3.8
5.0
70
15
30
65
84
32
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2009-09-29
2SK3439
−1.5
Max
Max
±10
100
300
2.5
5.0
10
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
4
Unit
Unit
mΩ
nC
nC
μA
μA
pF
ns
ns
V
V
S
A
A
A
A
V