2SA1179_0712 BILIN [Galaxy Semi-Conductor Holdings Limited], 2SA1179_0712 Datasheet - Page 2

• Manufacturer Part Number: 2SA1179_0712
• Description: Silicon Epitaxial Planar Transistor
• Manufacturer: BILIN [Galaxy Semi-Conductor Holdings Limited]

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
BL
ELECTRICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
Document number: BL/SSSTC093
Rev.A
Silicon Epitaxial Planar Transistor
Galaxy Electrical
Symbol
V
V
V
I
I
h
V
V
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
ob
@ Ta=25℃ unless otherwise specified
Test conditions
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
@ Ta=25℃ unless otherwise specified
CB
EB
CE
CE
CB
=-10μA,I
=-1mA,I
=-10μA,I
=-50mA, I
=-50mA, I
=-35V,I
=-4V,I
=-6V,I
=-6V, I
=-6V,I
C
C
B
E
E
C
C
=0
=-1mA
=0
=0,f=1MHz
E
=0
=0
=-10mA
B
B
=0
=-5mA
=-5mA
Production specification
MIN
-55
-50
-5
200
2SA1179
www.galaxycn.com
TYP
180
4
MAX
-0.1
-0.1
400
-0.5
-1.0
2
UNIT
V
V
V
μA
μA
V
V
MHz
pF