2SC5201_06 TOSHIBA [Toshiba Semiconductor], 2SC5201_06 Datasheet
2SC5201_06
Manufacturer Part Number
2SC5201_06
Description
Silicon NPN Triple Diffused Mesa Type High-Voltage Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC5201_06.pdf
(3 pages)
High-Voltage Switching Applications
•
•
Absolute Maximum Ratings
High breakdown voltage: V
Low saturation voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
DC
Pulse
(I
C
CE (sat)
CEO
= 20 mA, I
= 600 V
= 1.0 V (max)
(Ta = 25°C)
Symbol
V
V
V
B
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
= 0.5 mA)
2SC5201
j
−55 to 150
Rating
600
600
100
900
150
50
25
7
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
2006-11-10
2SC5201
―
Unit: mm
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2SC5201_06 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type High-Voltage Switching Applications • High breakdown voltage: V CEO • Low saturation voltage (sat mA Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Marking C5201 (Ta = 25°C) Symbol Test Condition 600 CBO ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...