2SC5200_04 TOSHIBA [Toshiba Semiconductor], 2SC5200_04 Datasheet
2SC5200_04
Manufacturer Part Number
2SC5200_04
Description
Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC5200_04.pdf
(4 pages)
Power Amplifier Applications
•
•
•
Maximum Ratings
Electrical Characteristics
High breakdown voltage: V
Complementary to 2SA1943
Suitable for use in 100-W high fidelity audio amplifier’s output stage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
FE (1)
Characteristics
Characteristics
classification R: 55 to 110, O: 80 to 160
(Tc = 25°C)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
CEO
(Tc = 25°C)
= 230 V (min)
V
V
Symbol
Symbol
(BR) CEO
h
h
V
V
V
CE (sat)
I
I
T
FE (1)
FE (2)
V
C
CBO
EBO
P
CBO
CEO
EBO
I
I
T
f
stg
BE
C
B
T
ob
C
j
2SC5200
(Note)
V
V
I
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CE
CB
−55 to 150
= 50 mA, I
= 8 A, I
Rating
= 5 V, I
= 230 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
230
230
150
150
1.5
15
5
1
B
C
= 0.8 A
C
C
C
C
Test Condition
B
E
= 0
= 1 A
= 7 A
= 7 A
= 1 A
E
= 0
= 0, f = 1 MHz
= 0
Unit
°C
°C
W
V
V
V
A
A
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
230
55
35
―
―
―
―
―
―
Typ.
200
0.4
1.0
60
30
―
―
―
―
2-21F1A
2004-07-07
2SC5200
―
―
Max
160
5.0
5.0
3.0
1.5
―
―
―
―
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
Related parts for 2SC5200_04
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANS NPN 230V 15A 2-21F1A
Manufacturer:
Toshiba
Datasheet:
Part Number:
Description:
BIPOLAR TRANSISTOR, NPN, 230V
Manufacturer:
Toshiba
Datasheet:
Part Number:
Description:
TRANS NPN 230V 15A 2-21F1A
Manufacturer:
Toshiba
Datasheet:
Part Number:
Description:
Transistors Bipolar - BJT Transistor NPN 230V 15A
Manufacturer:
Toshiba
Datasheet:
Part Number:
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SC5200_04 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications • High breakdown voltage 230 V (min) CEO • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = ...
Page 2
Marking Part No. (or abbreviation code) TOSHIBA 2SC5200 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SC5200 2004-07-07 ...
Page 3
I – Common emitter Tc = 25°C 16 800 600 400 300 12 250 200 150 100 Collector-emitter voltage V ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any ...