2SA1162_10 SECOS [SeCoS Halbleitertechnologie GmbH], 2SA1162_10 Datasheet
2SA1162_10
Manufacturer Part Number
2SA1162_10
Description
PNP Silicon General Purpose Transistor
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.2SA1162_10.pdf
(2 pages)
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
FEATURES
MECHANICAL DATA
CLASSIFICATION OF h
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Low Noise: NF=1 dB(Typ.), 10 dB(Max.)
Complements of the 2SC2712
Case: SOT-23, Molded Plastic
Weight: 0.008 grams(approx.)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Device Dissipation
Junction & Storage Temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Noise Figure
Product-Rank
Marking
Package
Range
SOT-23
Parameter
Elektronische Bauelemente
Parameter
2SA1162-O
70~140
SO
MPQ
FE
3K
Symbol
2SA1162-Y
V
V
V
V
120~240
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
h
C
NF
CBO
EBO
f
FE
T
ob
SY
A suffix of “-C” specifies halogen and lead free
(T
LeaderSize
A
(T
Symbol
T
= 25°C unless otherwise specified)
A
7’ inch
J
V
V
V
, T
Min.
P
CBO
CEO
I
= 25°C unless otherwise specified)
EBO
-50
-50
C
70
80
D
-5
RoHS Compliant Product
STG
-
-
-
-
-
2SA1162-GR
200~400
SG
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
PNP Silicon General Purpose Transistor
-0.1
-0.1
-0.3
400
10
7
-
-
-
-
125, -55 ~ 150
Ratings
-150
150
-50
-50
-5
Unit
MHz
μA
μA
K
F
pF
dB
V
V
V
V
REF.
2SA1162
-0.15A, -50V
1
C
D
A
B
E
F
Any changes of specification will not be informed individually.
Top View
I
I
I
V
V
I
V
V
V
V
C
C
E
C
E
A
3
CB
=-100μA, I
=-1mA, I
=-100μA, I
CB
EB
=-100mA, I
CE
CE
CB
Base
L
Min.
2.80
2.10
1.20
0.89
1.78
0.30
=-50V, I
= -5V, I
=-6V, I
=-10V, I
=-10V, I
=-6V, I
Millimeter
2
G
Test Conditions
SOT-23
C
C
C B
B
Max.
C
=0.1mA, f=1MHz, Rg=10KΩ
3.04
2.55
1.40
1.15
2.04
0.50
=-2mA
=0
E
C
E
=0
=0
=-1mA
=0, f=1MHz
D
B
E
C
Collector
=-10mA
=0
=0
Emitter
H
REF.
G
H
K
J
L
1
Unit
mW
mA
℃
V
V
V
Min.
0.09
0.45
0.08
0.89
2
Millimeter
0.6 REF.
Page 1 of 2
3
0.177
Max.
0.18
0.60
1.02
J
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2SA1162_10 Summary of contents
Page 1
Elektronische Bauelemente FEATURES Low Noise: NF=1 dB(Typ.), 10 dB(Max.) Complements of the 2SC2712 MECHANICAL DATA Case: SOT-23, Molded Plastic Weight: 0.008 grams(approx.) CLASSIFICATION 2SA1162-O Product-Rank 70~140 Range SO Marking PACKAGE INFORMATION Package MPQ ...
Page 2
Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. C 2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Any changes of specification will not be informed individually. Page ...