2SC5100_01 SANKEN [Sanken electric], 2SC5100_01 Datasheet
2SC5100_01
Manufacturer Part Number
2SC5100_01
Description
Silicon NPN Triple Diffused Planar Transistor
Manufacturer
SANKEN [Sanken electric]
Datasheet
1.2SC5100_01.pdf
(1 pages)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)
2 0 0
1 0 0
Symbol
V
V
V
I
I
P
Tj
T
5 0
2 0
Absolute maximum ratings
C
B
Typical Switching Characteristics (Common Emitter)
stg
CBO
CEO
EBO
C
0 . 0 2
V
(V)
4 0
3 0
2 0
1 0
40
– 0 . 0 2
CC
8
6
4
2
0
0
0
I
h
C
F E
f
– V
T
– I
– I
C E
C o l l e c t o r - Em i tt e r V o l ta g e V
C
E
(Ω)
75(Tc=25°C)
0 . 1
R
10
Characteristics (Typical)
–55 to +150
Characteristics (Typical)
Characteristics (Typical)
– 0 . 1
L
1
Ratings
C o l l e c to r C u rr e n t I
160
120
150
E m i tt e r C u r re n t I
6
8
3
(A)
I
4
2
C
0 .5
(Ta=25°C)
– 1
1
C
( A )
Unit
E
°C
°C
( A )
W
V
V
V
A
A
V
C E
(V)
3
10
BB1
( V)
2SC5100
(V
C E
( V
= 12V )
C E
= 4V)
5
–8
I
I
V
h
V
f
C
4
V
CBO
EBO
T
h
FE
(V)
Electrical Characteristics
(BR)CEO
CE
–5
OB
FE
BB2
Symbol
8
(sat)
Rank
h
200
100
50
20
F E
0 .5
0 .1
0.02
V
2 0
1 0
– I
O(50 to 100), P(70 to 140), Y(90 to 180)
(A)
0.4
I
3
2
1
0
5
1
5
B1
CE
0
Safe Operating Area (Single Pulse)
C
( s at ) – I
Temperature Characteristics (Typical)
V
V
CE
CB
I
V
Without Heatsink
C
Natural Cooling
C oll ec tor - Em i tter Vol tage V
CE
=12V, I
0.2
=3A, I
=10V, f=1MHz
10
Conditions
V
I
0.1
C
=4V, I
CB
V
–0.4
(A)
I
=50mA
EB
B2
C ol lec tor C ur r ent I
=160V
B
125˚ C
–30˚ C
=6V
Bas e C ur r ent I
25˚ C
B
Characteristics (Typical)
E
=0.3A
C
=–0.5A
0.4
=3A
0.13typ
( s)
t
on
0.5
0.6
2A
B
( A)
50
1
C
(A )
200
120
3.50typ
0.5
Ratings
10
10
50
20
C E
( s)
t
stg
0.8
( V)
max
max
min
min
max
typ
typ
4A
100
I
C
=8A
( V
(Ta=25°C)
C E
0.32typ
150
=4V)
5
1.0
( s)
MHz
Unit
t
pF
8
f
V
V
A
A
Application : Audio and General Purpose
0.5
0.2
I
C
4
1
3.5
80
60
40
20
1
– V
8
6
4
2
0
0
External Dimensions FM100(TO3PF)
0
0
Pc – T a Derating
Without Heatsink
BE
j- a
– t Characteristics
Temperature Characteristics (Typical)
25
5.45
A mbi ent Tem perature Ta(˚ C)
Base-E mi ttor V ol tage V
±0.1
1.5
10
B
a
b
0.5
50
15.6
Ti m e t( m s)
4.4
C
±0.2
75
1.5
E
5.45
1.05
1.75
2.15
ø3.3
±0.1
100
Weight : Approx 6.5g
a. Part No.
b. Lot No.
+0.2
-0.1
100
1.0
±0.2
BE
0.65
(V )
+0.2
-0.1
125
(V
5.5
3.45
C E
±0.2
=4V )
1000 2000
±0.2
3.35
0.8
127
150
1.5
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