2SA1160_07 TOSHIBA [Toshiba Semiconductor], 2SA1160_07 Datasheet
2SA1160_07
Manufacturer Part Number
2SA1160_07
Description
Strobe Flash Applications Medium Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1160_07.pdf
(4 pages)
Strobe Flash Applications
Medium Power Amplifier Applications
•
•
Absolute Maximum Ratings
High DC current gain and excellent h
: h
: h
Low saturation voltage
: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
FE (1)
FE (2)
CE (sat)
= 140 to 600 (V
= 60 (min), 120 (typ.) (V
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
= −0.5 V (max) (I
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
DC
Pulsed (Note 1)
CE
= −1 V, I
C
= −2 A, I
CE
(Ta = 25°C)
C
= −1 V, I
Symbol
V
V
FE
V
= −0.5 A)
B
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
= −50 mA)
j
2SA1160
linearity
C
= −4 A)
−55 to 150
Rating
−20
−10
900
150
−6
−2
−4
−2
1
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
2006-11-09
―
2SA1160
Unit: mm
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2SA1160_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent 140 to 600 (V = − ( ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 3: h Classification A: 140 to 280, B: ...
Page 3
I – −4 Common emitter −50 − 25°C −20 −3 −100 −10 −2 −5 −3 −1 − −0.8 −1.6 −2.4 −3.2 0 Collector-emitter voltage – 3000 Common ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...