2SA1150_07 TOSHIBA [Toshiba Semiconductor], 2SA1150_07 Datasheet
2SA1150_07
Manufacturer Part Number
2SA1150_07
Description
Low Frequency Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1150_07.pdf
(3 pages)
Low Frequency Amplifier Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
High h
Complementary to 2SC2710.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
FE
FE (1)
: h
Characteristics
Characteristics
FE
classification O: 100~200, Y: 160~320
= 100~320
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
(Ta = 25°C)
(Ta = 25°C)
V
V
Symbol
Symbol
(BR) CEO
h
h
V
V
V
CE (sat)
I
I
FE (1)
FE (2)
V
T
CBO
EBO
C
P
CBO
CEO
EBO
I
I
T
f
stg
BE
C
B
T
ob
C
2SA1150
j
(Note)
V
V
I
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CE
CB
= −10 mA, I
= −500 mA, I
−55~150
Rating
= −30 V, I
= −5 V, I
= −1 V, I
= −1 V, I
= −1 V, I
= −5 V, I
= −10 V, I
−800
−160
−35
−30
300
150
−5
1
Test Condition
C
C
C
C
C
B
E
E
= 0
= −100 mA
= −700 mA
= −10 mA
= −10 mA
B
= 0
= 0
= 0, f = 1 MHz
= −20 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.13 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.5
100
Min
−30
35
⎯
⎯
⎯
⎯
⎯
Typ.
120
19
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2-4E1A
2007-11-01
―
―
−0.1
−0.1
−0.7
−0.8
2SA1150
Max
320
⎯
⎯
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
V
V
V
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2SA1150_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Low Frequency Amplifier Applications • High 100~320 FE FE • Complementary to 2SC2710. Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector ...
Page 2
2 2SA1150 2007-11-01 ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...