2SA1091_07 TOSHIBA [Toshiba Semiconductor], 2SA1091_07 Datasheet
2SA1091_07
Manufacturer Part Number
2SA1091_07
Description
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1091_07.pdf
(4 pages)
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
High voltage: V
Low saturation voltage: V
Small collector output capacitance: C
Complementary to 2SC2551.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE (1)
Characteristics
Characteristics
classification R: 30~90 O: 50~150
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
CBO
= −300 V, V
CE (sat)
(Ta = 25°C)
CEO
= −0.5 V (max)
(Ta = 25°C)
V
V
V
V
Symbol
Symbol
= −300 V
ob
(BR) CBO
(BR) CEO
h
h
V
V
V
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
T
CBO
EBO
C
P
CBO
CEO
EBO
I
I
T
f
stg
= 6 pF (typ.)
C
B
T
ob
C
2SA1091
j
(Note)
V
V
I
I
V
V
I
I
V
V
C
C
C
C
CB
EB
CE
CE
CE
CB
= −0.1 mA, I
= −1 mA, I
= −20 mA, I
= −20 mA, I
−55~150
Rating
= −300 V, I
= −8 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
−300
−300
−100
−20
400
150
−8
1
Test Condition
B
C
B
B
C
C
C
E
E
= 0
= 0
E
= −2 mA
= −2 mA
= 0, f = 1 MHz
= −20 mA
= −1 mA
= −20 mA
= 0
= 0
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
−300
−300
Min
30
20
40
⎯
⎯
⎯
⎯
⎯
Typ.
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
2-5F1B
TO-92
SC-43
2007-11-01
2SA1091
−0.1
−0.1
−0.5
−1.2
Max
150
⎯
⎯
⎯
⎯
8
Unit: mm
MHz
Unit
μA
μA
pF
V
V
V
V
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2SA1091_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage −300 V, V CBO • Low saturation voltage ...
Page 2
2 2SA1091 2007-11-01 ...
Page 3
3 2SA1091 2007-11-01 ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...