2SA1085DTZ-E RENESAS [Renesas Technology Corp], 2SA1085DTZ-E Datasheet - Page 2

• Manufacturer Part Number: 2SA1085DTZ-E
• Description: Silicon PNP Epitaxial
• Manufacturer: RENESAS [Renesas Technology Corp]

2SA1084, 2SA1085
Electrical Characteristics
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output
capacitance
Noise voltage referred to
input
Note:
250 to 500
Rev.3.00 Aug 10, 2005 page 2 of 5
D
1. The 2SA1084 and 2SA1085 are grouped by h
Item
400 to 800
E
Symbol
V
V
V
V
h
(BR)CBO
(BR)CEO
(BR)EBO
Cob
I
I
CE(sat)
V
CBO
EBO
FE
e
f
BE
T
n
*
1
Min
–90
–90
250
–5
—
—
—
—
—
—
—
2SA1084
–0.6
Typ
3.5
0.5
90
—
—
—
—
—
—
—
Max
–0.1
–0.1
–0.2
800
FE
—
—
—
—
—
—
—
as follows.
–120
–120
Min
250
–5
—
—
—
—
—
—
—
2SA1085
–0.6
Typ
3.5
0.5
90
—
—
—
—
—
—
—
Max
–0.1
–0.1
–0.2
800
—
—
—
—
—
—
—
MHz V
Unit
nV/
pF
V
V
V
V
V
Hz
A
A
I
I
R
I
V
V
V
I
I
I
V
I
I
V
f = 1 MHz
V
I
f = 1 kHz,
R
C
C
E
C
C
B
C
C
C
CB
EB
CE
CE
CE
CB
CE
BE
g
= –10 A, I
= –1 mA,
= –10 A, I
= –2 mA
= –10 mA,
= –1 mA
= –2 mA
= –2 mA
= –10 mA,
= 0, f = 1Hz
Test conditions
= –2 V, I
=
= –50 V, I
= –12 V,
= –12 V,
= –12 V,
= –10 V, I
= –6V,
(Ta = 25°C)
C
E
C
E
E
= 0
= 0
= 0
= 0
= 0,