ZXTP558LSTZ DIODES [Diodes Incorporated], ZXTP558LSTZ Datasheet - Page 2

• Manufacturer Part Number: ZXTP558LSTZ
• Description: 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note x)
Thermal Resistance, Junction to Ambient @ T
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain (Note 4)
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
Output Capacitance (Note 4)
Current Gain-Bandwidth Product
Turn-On Time
Turn-Off Time
Notes:
ZXTP558L
Document number: DS32186 Rev. 1 - 2
4. Measured under pulsed conditions. Pulse width = 300μs; Duty cycle ≤ 2%.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
A
= 25°C unless otherwise specified
= 25°C
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
I
BE(sat)
BE(on)
h
CBO
CES
EBO
t
t
f
obo
on
off
FE
T
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2 of 5
Symbol
Symbol
-400
-400
T
Min
100
100
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
V
-7
V
J,
R
P
CBO
CEO
EBO
I
T
θ JA
C
D
STG
1600
Typ
95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
-100
-100
-100
300
-0.2
-0.5
-0.9
-0.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
5
A Product Line of
-55 to +150
MHz
Unit
Value
Value
nA
nA
nA
pF
⎯
⎯
ns
ns
-400
-400
-500
V
V
V
V
V
V
125
-7
1
I
I
I
V
V
V
V
V
I
I
V
I
V
V
f = 20MHz
V
I
C
C
E
C
C
C
B1
CB
CE
BE
CE
CE
CE
CB
CE
CE
= -100μA
= -100μA
= -10mA
= -20mA, I
= -50mA, I
= -50mA, I
= 5mA, I
= -320V
= -320V
= -4V
= -10V, I
= -10V, I
= -10V, I
= -20V, f = 1.0MHz
= -20V, I
= -100V, I
Test Condition
B2
C
C
B
B
C
B
C
ZXTP558L
C
= -10mA
= -2mA
= -6mA
= -5mA
= -1mA
= -50mA
= -50mA
= -10mA,
© Diodes Incorporated
= -50mA
°C/W
Unit
Unit
mA
°C
W
V
V
V
June 2010