ZXTC2063E6_08 ZETEX [Zetex Semiconductors], ZXTC2063E6_08 Datasheet

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ZXTC2063E6_08

Manufacturer Part Number
ZXTC2063E6_08
Description
40V, SOT23-6, complementary medium power transistors
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
ZXTC2063E6
40V, SOT23-6, complementary medium power transistors
Summary
BV
BV
I
V
R
P
Description
Advanced process capability has been used to achieve
this high performance device. Combining NPN and PNP
transistors in the SOT23-6 package provides a compact
solution for the intended applications.
Features
Applications
Ordering information
Device marking
2063
Issue 2 - October 2008
© Diodes Incorporated 2008
C(cont)
Device
ZXTC2063E6TA
D
CE(sat)
CE(sat)
CEO
ECO
NPN - PNP combination
Very low saturation voltage
High gain
SOT23-6 package
MOSFET and IGBT gate driving
Motor drive
= 1.1W
> 40 (-40)V
> 6 (-3)V
= 3.5 (-3)A
= 38 (58)m
< 60 (-90)mV @ 1A
reel size
(inches)
7
Tape width
(mm)
8
1
Diodes Incorporated
Quantity
per reel
3000
A Product Line of
B1
E1
C1
C1
C2
B1
B2
www.diodes.com
Top view
www.zetex.com
E2
C2
E1
B2
E2

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ZXTC2063E6_08 Summary of contents

Page 1

ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BV > 40 (-40)V CEO BV > 6 (-3)V ECO I = 3.5 (-3)A C(cont) V < 60 (-90) CE(sat (58)m CE(sat 1.1W D Description ...

Page 2

Absolute maximum and thermal ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation @ T = 25°C amb Linear derating factor Power dissipation @ T = 25°C ...

Page 3

Thermal characteristics Issue 2 - October 2008 © Diodes Incorporated 2008 ZXTC2063E6 3 www.zetex.com www.diodes.com ...

Page 4

Electrical characteristics (at T Parameter Symbol Collector-base BV CBO breakdown voltage Collector-emitter BV CEO breakdown voltage (base open) Emitter-base BV EBO breakdown voltage Emitter-collector BV ECX breakdown voltage (reverse blocking) Emitter-collector BV ECO breakdown voltage (base open) Collector-base cut-off I ...

Page 5

NPN Characteristics Issue 2 - October 2008 © Diodes Incorporated 2008 ZXTC2063E6 5 www.zetex.com www.diodes.com ...

Page 6

PNP Characteristics Issue 2 - October 2008 © Diodes Incorporated 2008 ZXTC2063E6 6 www.zetex.com www.diodes.com ...

Page 7

Package outline - SOT23-6 DIM Min. A 0.90 A1 0.00 A2 0.90 b 0.35 C 0.09 D 2.70 E 2.20 E1 1. 0° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches ...

Page 8

Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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