ZXTC2062E6_08 ZETEX [Zetex Semiconductors], ZXTC2062E6_08 Datasheet

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ZXTC2062E6_08

Manufacturer Part Number
ZXTC2062E6_08
Description
20V, SOT23-6, complementary medium power transistors
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
ZXTC2062E6
20V, SOT23-6, complementary medium power transistors
Summary
BV
BV
I
V
R
P
Description
Advanced process capability has been used to
achieve
Combining NPN and PNP transistors in the
SOT23-6 package provides a compact solution
for the intended applications
Features
Applications
Ordering information
Device marking
2062
Issue 2 - October 2008
© Diodes Incorporated 2008
C(cont)
DEVICE
ZXTC2062E6TA
D
CE(sat)
CE(sat)
CEO
ECO
NPN-PNP combination
Very low saturation voltage
High gain
SOT23-6 package
MOSFET and IGBT gate driving
Motor drive
= 1.1W
> 20 (-20)V
> 5 (-4)V
= 4 (-3.5)A
= 35 (54)m
< 50 (-65)mV @ 1A
this
high
performance
Reel size
(inches)
7
Tape width
device.
(mm)
8
1
Quantity
Diodes Incorporated
per reel
3000
A Product Line of
B1
E1
C1
C1
C2
B1
B2
www.diodes.com
www.zetex.com
Top view
E2
C2
E1
B2
E2

Related parts for ZXTC2062E6_08

ZXTC2062E6_08 Summary of contents

Page 1

ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BV > 20 (-20)V CEO BV > 5 (-4)V ECO (-3.5)A C(cont) V < 50 (-65) CE(sat (54)m CE(sat 1.1W D Description ...

Page 2

Absolute maximum and thermal ratings PARAMETER Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current Peak pulse current Base current Power dissipation at T =25°C A Linear derating factor Power dissipation at T =25°C A Linear ...

Page 3

Thermal characteristics Issue 2 - October 2008 © Diodes Incorporated 2008 ZXTC2062E6 3 www.zetex.com www.diodes.com ...

Page 4

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Parameter Symbol Collector-base BV breakdown voltage Collector-emitter BV breakdown voltage (base open) Emitter-base BV breakdown voltage Emitter-collector BV breakdown voltage (base open) Collector-base cut-off I CBO current Emitter-base cut-off I EBO ...

Page 5

NPN electrical characteristics 1 Tamb=25° =50 100m C B 10m 1m 1m 10m 100m I Collector Current ( CE(SAT) 150°C 1.4 1.2 100°C 1.0 0.8 25°C 0.6 0.4 -55°C 0.2 0.0 1m 10m 100m I Collector ...

Page 6

PNP electrical characteristics 1 Tamb=25° =100 C B 100m 10m 1m 1m 10m 100m - I Collector Current ( CE(SAT) 1.8 150°C 1.6 1.4 100°C 1.2 1.0 25°C 0.8 0.6 0.4 -55°C 0.2 0.0 1m 10m ...

Page 7

Package outline SOT23-6 Package outline DIM Min. A 0.90 A1 0.00 A2 0.90 b 0.35 C 0.09 D 2.70 E 2.20 E1 1. 0° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in ...

Page 8

Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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