ZXTP03200BZTA DIODES [Diodes Incorporated], ZXTP03200BZTA Datasheet - Page 2

• Manufacturer Part Number: ZXTP03200BZTA
• Description: 200V PNP LOW VCE(sat ) TRANSISTOR IN SOT-89
• Manufacturer: DIODES [Diodes Incorporated]

Thermal Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note a)
Base Current
Peak Pulse Current
Power Dissipation at T
Linear derating factor
Power Dissipation at T
Linear derating factor
Power Dissipation at T
Linear derating factor
Power Dissipation at T
Linear derating factor
Power Dissipation at T
Linear derating factor
Junction to Ambient (Note a)
Junction to Ambient (Note b)
Junction to Ambient (Note c)
Junction to Ambient (Note d)
Junction to Lead (Note e)
Operating and Storage Temperature Range
Notes:
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
a. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
b. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
c. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions.
d. As (c) above measured at t<5 seconds
e. Junction to lead from collector Tab. Typical
A
A
A
A
A
= 25°C (Note a)
= 25°C (Note b)
= 25°C (Note c)
= 25°C (Note d)
= 25°C (Note e)
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
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2 of 7
2 00 V PN P L OW V
Symbol
Symbol
T
V
V
V
J,
R
R
R
R
R
I
P
P
P
P
P
CBO
CEO
EBO
I
I
CM
T
θ JA
θ JA
θ JA
θ JA
θ JL
C
B
D
D
D
D
D
STG
Diodes Incorporated
C E ( s a t )
A Product Line of
-55 to +150
Value
Value
309.6
-220
-200
14.4
19.2
4.46
35.7
38.7
3.23
117
1.1
8.8
1.8
2.4
68
51
28
-7
-2
-1
-5
TRAN SIST OR IN SOT -89
ZXTP03200BZ
© Diodes Incorporated
mW /°C
mW /°C
mW /°C
mW /°C
mW /°C
°C/W
°C/W
°C/W
°C/W
°C/W
August 2009
Unit
Unit
°C
W
W
W
W
W
V
V
V
A
A
A