2SK3101 SANYO [Sanyo Semicon Device], 2SK3101 Datasheet

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2SK3101

Manufacturer Part Number
2SK3101
Description
General-Purpose Switching Device Applications
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3101
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Ordering number : ENN7910
2SK3101LS
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
*1 V DD =50V, L=1mH, I AV =11A
*2 L 1mH, single pulse
Electrical Characteristics at Ta=25 C
Marking : K3101
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Low Qg.
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
E AS
Tstg
I DP
Tch
I AV
P D
yfs
I D
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
PW 10 s, duty cycle 1%
Tc=25 C
I D =1mA, V GS =0
V DS =320V, V GS =0
V GS = 30V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =8A
I D =8A, V GS =15V
2SK3101LS
Conditions
Conditions
min
81004 TS IM TB-00000033
400
3.0
4.0
Ratings
typ
Ratings
0.32
8.0
Continued on next page.
--55 to +150
max
69.1
400
150
2.0
100
1.0
4.0
0.4
30
44
40
11
11
No.7910-1/5
Unit
Unit
m
mJ
n
W
W
V
V
A
A
A
V
V
S
C
C
A
A

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2SK3101 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3101LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... Switching Time Test Circuit V DD =200V =15V R L =25 D PW=1 s D.C. 0.5% G 2SK3101LS 2SK3101LS Symbol Conditions Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz Crss V DS =20V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit ...

Page 3

... Drain Current 0.001 0.2 0.4 0.6 0.8 Diode Forward Voltage 2SK3101LS =10V = IT06561 1.2 Tc=25 C 1.0 0.8 0.6 0.4 0 --50 IT06563 =10V ...

Page 4

... Single pulse 0. 1.0 10 Drain-to-Source Voltage 100 Case Temperature 2SK3101LS 12 f=1MHz 200 IT06568 2 2.0 1.5 1.0 0 100 IT06570 120 ...

Page 5

... Note on usage : Be careful in handling the 2SK3101LS because it has no protection diode between gate and source. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ ...

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