2SK3101 SANYO [Sanyo Semicon Device], 2SK3101 Datasheet
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2SK3101
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2SK3101 Summary of contents
Page 1
... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3101LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...
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... Switching Time Test Circuit V DD =200V =15V R L =25 D PW=1 s D.C. 0.5% G 2SK3101LS 2SK3101LS Symbol Conditions Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz Crss V DS =20V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit ...
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... Drain Current 0.001 0.2 0.4 0.6 0.8 Diode Forward Voltage 2SK3101LS =10V = IT06561 1.2 Tc=25 C 1.0 0.8 0.6 0.4 0 --50 IT06563 =10V ...
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... Single pulse 0. 1.0 10 Drain-to-Source Voltage 100 Case Temperature 2SK3101LS 12 f=1MHz 200 IT06568 2 2.0 1.5 1.0 0 100 IT06570 120 ...
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... Note on usage : Be careful in handling the 2SK3101LS because it has no protection diode between gate and source. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ ...