ZXTN19 ZETEX [Zetex Semiconductors], ZXTN19 Datasheet - Page 4

• Manufacturer Part Number: ZXTN19
• Description: 60V NPN low sat medium power transistor
• Manufacturer: ZETEX [Zetex Semiconductors]

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1 - February 2008
© Zetex Semiconductors plc 2008
NOTES:
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-Collector
Breakdown Voltage
(Reverse Blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Collector-Emitter cut-off
current
Emitter cut-off current
Collector-Emitter
saturation voltage
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
BV
BV
BV
BV
BV
BV
I
I
I
V
V
V
h
f
C
C
t
t
t
t
CBO
CEX
EBO
T
d
r
s
f
FE
CE(sat)
BE(sat)
BE(on)
ibo
obo
CBO
CEX
CEO
ECX
ECO
EBO
amb
Min.
160
160
200
160
= 25°C unless otherwise stated).
60
25
6
6
7
4
1050
Typ.
19.7
27.3
13.2
90.3
200
200
105
110
200
960
300
220
130
310
682
8.3
75
<1
<1
37
40
7
7
Max.
1150
1050
100
155
150
300
500
400
0.5
50
50
50
25
MHz
Unit
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
A
ZXTN19060CG
Conditions
I
I
or
-1V < V
I
I
or
0.25V > V
I
I
V
V
V
or
-1V < V
V
I
I
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
I
C
C
C
E
E
E
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CE
EB
EB
CB
= 10mA
= 100 A
= 100 A
= 1A, I
= 1A, I
= 2A, I
= 7A, I
= 7A, I
= 7A, V
= 100mA, V
= 2A, V
= 7A, V
= 50mA, V
= 500mA, V
= 100 A
= 100 A, R
= 100 A, R
= -I
= 160V, T
= 5.6V
= 0.5V, f = 1MHz
= 160V
= 160V, R
= 10V, f = 1MHz
B2
BE
BE
www.zetex.com
B
B
B
B
B
= 50mA
CE
CE
CE
BC
< 0.25V
< 0.25V
= 100mA
= 10mA
= 40mA
= 700mA
= 700mA
(*)
= 2V
= 2V
= 2V
amb
CE
> -0.25V
BC
BE
BE
CE
CC
= 10V
= 100°C
< 1kΩ
< 1kΩ
< 1kΩ
= 2V
= 10V,
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)