HFI50N06 SEMIHOW [SemiHow Co.,Ltd.], HFI50N06 Datasheet - Page 4

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HFI50N06

Manufacturer Part Number
HFI50N06
Description
60V N-Channel MOSFET
Manufacturer
SEMIHOW [SemiHow Co.,Ltd.]
Datasheet
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-100
3
2
1
0
10
-1
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
-50
T
V
J
DS
, Junction Temperature [
10
vs Temperature
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
* Notes :
10
10
0
10
1. T
2. T
3. Single Pulse
-1
-2
10
0
C
J
= 175
= 25
-5
D=0.5
o
0.05
0.02
0.01
C
0.1
o
0.2
DS(on)
50
C
Figure 11. Transient Thermal Response Curve
(continued)
DC
10
100
10
1
10 ms
-4
o
single pulse
C]
* Note :
t
1 ms
1. V
2. I
1
, Square Wave Pulse Duration [sec]
D
GS
= 250 µA
100 µs
150
= 0 V
10
-3
200
10
2
10
-2
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
0
-100
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
P
* Notes :
10
DM
1. Z
2. Duty Factor, D=t
3. T
-1
θJC
JM
-50
50
(t) = 1.24
- T
C
= P
t
T
1
J
DM
T
t
10
, Junction Temperature [
2
C
vs Temperature
75
vs Case Temperature
o
0
, Case Temperature [
C/W Max.
* Z
0
1
θJC
/t
2
(t)
100
50
10
1
100
125
o
c]
o
C]
◎ SEMIHOW REV.A0,Mar 2009
∗ Note :
1. V
2. I
150
150
D
GS
= 25 A
= 10 V
200
175

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