PK200GB40 SANREX [SanRex Corporation], PK200GB40 Datasheet
PK200GB40
Manufacturer Part Number
PK200GB40
Description
THYRISTOR MODULE
Manufacturer
SANREX [SanRex Corporation]
Datasheet
1.PK200GB40.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PK200GB40
Manufacturer:
SanRex
Quantity:
1 000
Part Number:
PK200GB40
Manufacturer:
SANREX
Quantity:
20 000
Part Number:
PK200GB40
Quantity:
60
（Applications）
Power Thyristor/Diode Module PK200GB series are designed for various rectifier
circuits and power controls. For your circuit application. following internal connections
and wide voltage ratings up to 800V are available.
Isolated mounting base
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
■Maximum Ratings
■Electrical Characteristics
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
●
●
●
Rth （ j-c）＊Thermal Impedance, max.
Symbol
Symbol
Symbol
I
I
I
di/dt 200 A/μs
dv/dt 500V/μs
P
GT
dv/dt
T （ RMS）
T （ AV）
V
V
V
I
V
V
di/dt
Tstg
P
I
V
I
I
T （ AV）
I
V
V
G （AV）
FGM
DRM
RRM
TSM
tgt
RGM
RRM
RSM
DRM
I
FGM
/V
Tj
I
I
GM
ISO
THYRISTOR MODULE
PK
TM
GD
2
H
L
t
GT
200A, I
＊Repetitive Peak Reverse Voltage
＊Non-Repetitive Peak Reverse Voltage
＊Average On-State Current
＊R.M.S. On-State Current
＊I
＊Isolation Breakdown Voltage（R.M.S.）
＊Operating Junction Temperature
＊Storage Temperature
＊Repetitive Peak Reverse Current, max.
＊Peak On-State Voltage, max.
＊Surge On-State Current
Repetitive Peak Off-State Voltage
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage（Forward）
Peak Gate Voltage（Reverse）
Critical Rate of Rise of On-State Current
Repetitive Peak Off-State Current, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Mounting
Torque
Mass
2
t
T （ RMS）
( PD,PE )
310A, I
Item
Item
Item
Mounting（M5）
Terminal（M8）
TSM
A1K2
3
5500A
（K2）
2
200GB
PK
（A2）
1
Internal Configurations
K1
G2
K2
G1
Single phase, half wave, 180° conduction, Tc：74℃
Single phase, half wave, 180° conduction, Tc：74℃
1
Value for one cycle of surge current
I
A.C. 1 minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 8.8-10 （90-105）
Typical Value
at V
at V
On-State Current 600A, Tj＝125℃ Inst. measurement
Tj＝25℃，I
Tj＝125℃，V
I
Tj＝125℃, V
Tj＝25℃
Tj＝25℃
Junction to case
／
T
G
＝200A， I
2
＝100mA， Tj＝25℃， V
cycle, 50Hz/60Hz, peak Value, non-reqetitive
A1K2
PK200GB40 PD200GB40
PE200GB40
3
DRM
DRM
, Single phase, half wave, Tj＝125℃
, Single phase, half wave, Tj＝125℃
（K2）
G
＝100mA， Tj＝25℃, V
2
PD
T
＝1A，V
D
D
（A2）
＝
400
480
400
＝
1
2
／
K1
1
／
3
G1
K2
2
V
Conditions
Conditions
V
DRM
DRM
D
D
A1K2
＝
＝6V
3
, Exponential wave.
1
／
D
2
＝
V
（K2）
DRM
1
／
2
2
PE
V
DRM
Ratings
， dI
， dI
（A2）
G
/dt＝0.1A/ μs
1
G
K1
/dt＝0.1A/μs
K2
G2
PK200GB80 PD200GB80
PE200GB80
12
800
960
800
18
−40 to ＋125
−40 to ＋125
26
5000/5500
M8×14
11（115）
80±0.3
2.7（28）
2
Ratings
Ratings
125000
100/3
92
2500
200
310
1.50
0.25
0.18
26
200
510
500
100
10
10
50
50
10
50
3
3
5
UL;E76102 （ M）
（2.8.0.5T）
♯110TAB
7
4- φ6 （M5）
R8.0
（㎏f･B）
Unit：A
mA/V
A/ μs
℃/W
V/ μs
N･ｍ
Unit
Unit
Unit
A
mA
mA
μs
mA
mA
℃
℃
W
W
A
A
A
A
V
V
V
V
V
V
g
V
V
2
S
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PK200GB40 Summary of contents
Page 1
... G1 （A2） （K2） （A2） A1K2 A1K2 PK PD PK200GB40 PD200GB40 PE200GB40 400 480 400 Conditions Single phase, half wave, 180° conduction, Tc：74℃ Single phase, half wave, 180° conduction, Tc：74℃ 1 ／ cycle, 50Hz/60Hz, peak Value, non-reqetitive ...
Page 2
Gate Characteristics ２ Peak Forward Gate Voltage （10V） Peak Forward Gate Voltage （10V） １ ０ １ ５ ２ ０ １ ０ −30℃ ５ 25℃ 125℃ ２ Maximum Gate Non-Trigger Voltage （3A） Maximum Gate Non-Trigger Voltage （3A） １ ０ − １ ...