TS83C51RD2 ATMEL [ATMEL Corporation], TS83C51RD2 Datasheet - Page 9

• Manufacturer Part Number: TS83C51RD2
• Description: Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5Um
• Manufacturer: ATMEL [ATMEL Corporation]

Qualpack TS87C51RD2/TS83C51RD2
4.2.1.2 Electro-migration
Characterization
Stresses of electro-migration are achieved for 1000 hours on 32 packaged metal line running on flat with a current
density of 2x10 6 A/cm² at a temperature of 200°C. Lines are declared to be failed for a shift of the initial resistance
by 20%. Results are summarized in the table below.
Lifetime projection
The objective of reliability is to reach less than 10 FIT on metal line within 10 years at a temperature of 150°C. As
no failures have been found at 1000 hours in the above stress conditions a lifetime projection in FIT is
meaningless.
However, assuming for AlCu metalization an activation energy in temperature Ea of 0.60eV and an activation in
current with a power-law coefficient n of 2, the current density which guarantees no failures within 10 years at
150°C can be extrapolated.
With these assumptions the projected current density for no failures at 150°C within 10 years is calculated as
5x10 5 A/cm² which is much higher than the current density of 2x10 5 A/cm² specified in the design rules.
June 2001
Level
Metal1
Metal2
Metal3
(1) W/L/T=Width/Length/Thickness of the metal line in microns
W/L/T (1)
2/2000/0.50
2/2000/0.50
2/2000/0.70
Structure
Ti/TiN/AlCu/TiN
Ti/TiN/AlCu/TiN
Ti/TiN/AlCu/TiN
Atmel Wireless & Microcontrollers
Failures
no
no
no
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