XC61H TOREX [Torex Semiconductor], XC61H Datasheet - Page 4

• Manufacturer Part Number: XC61H
• Description: Voltage Detector with Delay Circuit Built-In
• Manufacturer: TOREX [Torex Semiconductor]

■ABSOLUTE MAXIMUM RATINGS
■ELECTRICAL CHARACTERISTICS
4/13
Power Dissipation
V
Release Voltage: V
(*1) The supply current during power-start until output being stable (during release operation) is 2μA greater with comparison to the period
Temperature Characteristics
Leakage
(V
Output Voltage
DF
Current
XC61H
DR
(T) is nominal detect voltage value
Release Delay Time
Operating Temperature Range
Supply Current
Operating Voltage
after the completion of release operation because of the shoot-through current in delay current.
Storage Temperature Range
Hysteresis Width
→ RESEB inversion)
Output Current
Detect Voltage
Detect Voltage
PARAMETER
Output Current
PARAMETER
Input Voltage
Nch Open Drain
CMOS Output
DR
= V
Series
(*1)
DF
N-ch open drain
+ V
SOT-23
CMOS
HYS
ΔTopr･V
SYMBOL
V
ΔV
I
I
V
LEAK
V
t
I
OUT
HYS
SS
DR
DF
IN
DF
DF
SYMBOL
V
N-ch, V
P-ch, V
(CMOS Output)
V
V
RESTB
DF
IN
IN
Topr
=10.0V, V
Tstg
I
=1.6V∼6.0V
V
Pd
changes from 0.6V to 10V
OUT
IN
DS
DS
CONDITIONS
=2.1V
= 0.5V
OUT
V
V
=10.0V
SS
RATINGS
-40∼+125
SS
-30∼+80
-0.3 ~V
-0.3 ~ 12
12.0
250
50
V
V
V
V
V
V
V
V
V
V
V
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
= 1.5V
= 2.0V
= 3.0V
= 4.0V
= 5.0V
= 1.0V
= 2.0V
= 3.0V
= 4.0V
= 5.0V
= 8.0V
+0.3
Ta=25℃
UNITS
x 0.98
x 0.02
MIN.
V
mW
V
mA
0.7
1.0
3.0
5.0
6.0
7.0
50
80
℃
℃
DF(T)
V
V
1
DF
-
-
-
-
-
-
-
-
x 0.05
-10.0
±100
TYP.
V
10.1
13.0
0.01
0.01
11.5
V
0.9
1.0
1.3
1.6
2.0
2.2
7.7
DF(T)
DF
-
-
-
-
x 1.02
x 0.08
MAX.
V
10.0
-2.0
200
400
V
2.6
3.0
3.4
3.8
4.2
0.1
50
DF(T)
DF
-
-
-
-
-
-
-
ppm/℃
UNITS
μA
μA
mA
ms
V
V
V
Ta = 25℃
CIRCUIT
①
①
②
①
③
④
③
⑤
-