XC61F TOREX [Torex Semiconductor], XC61F Datasheet - Page 6

• Manufacturer Part Number: XC61F
• Description: Voltage Detectors ( Delay Circuit Built-In)
• Manufacturer: TOREX [Torex Semiconductor]

2
162
■Block Diagram
■Electrical Characteristics
XC61F
Note : The power consumption during power-start to output being stable (release operation) is 2 µA greater than it is after that period
V
Release Voltage : V
* Transient Delay Time : 1ms to 50ms & 80ms to 400ms versions are also available.
Temperature Characteristics
(1)CMOS output
(2)N-channel open drain output
DF
(V
(T)：established detect voltage value
Transient Delay Time
DR
Vref
Vref
Operating Voltage
Hysteresis Range
(completion of release operation) because of delay circuit through current.
PARAMETER
Supply Current
Output Current
Detect Voltage
Detect Voltage
V
V
V
OUT
V
V
SS
IN
IN
SS
inversion)
DR
Seires
= V
Delay Circuit
Delay Circuit
DF
+ V
HYS
∆ Topr
SYMBOL
tDLY *
V
∆ V
I
V
OUT
V
HYS
I
SS
DF
IN
DF
•
V
DF
V
V
OUT
OUT
P-ch
N-ch
V
V
( CMOS output )
DF
IN
CONDITIONS
0.6V to 10V
=1.6V to 6.0V
changes from
■絶対最大定格
■Absolute Maximum Ratings
Power Dissipation
Continuous Total
Output Voltage
Operating Ambient Temperature
V
V
Storage Temperature
V
V
V
DS
DS
PARAMETER
Output Current
IN
IN
IN
Input Voltage
=2.0V
=3.0V
=4.0V
=5.0V
=0.5V
=2.0V
=3.0V
=4.0V
=5.0V
=2.1V
=1.5V
=1.0V
=8.0V
N-ch open drain
V
SOT-89
CMOS
SOT-23
TO-92
x 0.98
x 0.02
MIN
DF
V
0.7
50
DF
(T)
V
x 0.05
DF
± 100
V
-10.0
TYP
10.1
11.5
13.0
SYMBOL
0.9
1.0
1.3
1.6
2.0
2.2
7.7
DF
V
I
OUT
(T)
V
Topr
OUT
Tstg
Pd
IN
V
MAX
x 1.02
x 0.08
DF
V
10.0
200
2.6
3.0
3.4
3.8
4.2
DF
V
SS
(T)
V
-40 ∼ +125
-0.3 ∼ V
SS
RATINGS
-30 ∼ +80
ppm/°C
UNITS
-0.3 ∼ 9
150
500
300
12
50
mA
µA
ms
V
V
V
IN
+0.3
CIRCUIT
Ta＝25℃
1
1
2
1
3
4
5
-
UNITS
mW
mA
O
O
Ta=25℃
V
V
C
C