MC9RS08KA1 FREESCALE [Freescale Semiconductor, Inc], MC9RS08KA1 Datasheet - Page 120
MC9RS08KA1
Manufacturer Part Number
MC9RS08KA1
Description
RS08 Microcontrollers
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheets
1.MC9RS08KA2.pdf
(136 pages)
2.MC9RS08KA1.pdf
(136 pages)
3.MC9RS08KA1.pdf
(132 pages)
4.MC9RS08KA1.pdf
(132 pages)
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Appendix A Electrical Characteristics
120
1
2
3
Supply voltage for program/erase
Program/Erase voltage
V
Supply voltage for read operation
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
Data retention
Typicals are measured at 25°C.
t
be programmed more than twice before next erase.
Fast V
into the pad and cause permanent damage to the pad. External filtering for the V
recommended. An example VPP filter is shown in
PP
PP
PP
hv
Program
Mass erase
0 < f
T
L
is the cumulative high voltage programming time to the same row before next erase. Same address can not
current
to PGM/MASS setup time
rise time
to T
Bus
PP
me
H
< 10 MHz
rise time may potentially trigger the ESD protection structure, which may result in over current flowing
PP
= –40°C to + 85°C
& t
3
Characteristic
hold time
hv
applied to device)
2
MC9RS08KA2 Series Data Sheet, Rev. 4
Table A-9. FLASH Characteristics
I
I
VPP_erase
Symbol
VPP_prog
t
V
hv_total
t
t
t
V
V
D_ret
t
t
t
nvh1
t
t
prog
t
t
t
Read
t
pgs
nvs
nvh
vps
vph
—
me
vrs
rcv
hv
DD
PP
Figure
A-3.
1000
11.8
Min
500
100
200
2.7
1.8
20
10
20
20
15
—
—
—
—
5
5
1
Typical
100
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
PP
power source is
Max
12.2
200
100
5.5
5.5
40
—
—
—
—
—
—
—
—
—
—
—
8
2
Freescale Semiconductor
cycles
hours
years
Unit
μA
μA
ms
ms
μs
μs
μs
μs
μs
ns
ns
ns
μs
V
V
V