MCF51JU128VHS FREESCALE [Freescale Semiconductor, Inc], MCF51JU128VHS Datasheet - Page 29

• Manufacturer Part Number: MCF51JU128VHS
• Description: MCF51JU128
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
6.4.1.4 Reliability specifications
Freescale Semiconductor, Inc.
t
t
t
t
t
t
t
t
nvmretee100
t
eewr32b16k
eewr32b32k
t
t
t
nvmretp10k
nvmretp100
nvmretd10k
nvmretd100
nvmretee10
n
n
Symbol
eewr32b8k
Symbol
nvmretp1k
nvmretd1k
nvmretee1
nvmcycp
nvmcycd
I
Symbol
DD_PGM
Longword-write to FlexRAM execution time:
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Data retention up to 1% of write endurance
Description
Description
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
Table 17. Flash command timing specifications (continued)
Worst case programming current in program flash
Description
Table 18. Flash (FTFL) current and power specfications
Table 19. NVM reliability specifications
MCF51JU128 Data Sheet, Rev. 4, 01/2012.
Table continues on the next page...
FlexRAM as EEPROM
Program Flash
Data Flash
10 K
10 K
Min.
Min.
10
15
10
15
10
15
—
—
—
5
5
5
Typ.
35 K
35 K
Typ.
545
630
810
100
100
100
100
100
100
50
50
50
1
Memories and memory interfaces
1950
2050
2250
Max.
Max.
Typ.
10
—
—
—
—
—
—
—
—
—
—
—
cycles
cycles
years
years
years
years
years
years
years
years
years
Unit
Unit
μs
μs
μs
Unit
mA
Notes
Notes
2
2
2
3
2
2
2
3
2
2
2
29